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Haneda, M., Iijima, J., Koike, J. (2007) Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C. Applied Physics Letters, 90 (25). 252107pp. doi:10.1063/1.2750402

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Reference TypeJournal (article/letter/editorial)
TitleGrowth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C
JournalApplied Physics Letters
AuthorsHaneda, M.Author
Iijima, J.Author
Koike, J.Author
Year2007 (June 18)Volume90
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2750402Search in ResearchGate
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Mindat Ref. ID8554707Long-form Identifiermindat:1:5:8554707:0
GUID0
Full ReferenceHaneda, M., Iijima, J., Koike, J. (2007) Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C. Applied Physics Letters, 90 (25). 252107pp. doi:10.1063/1.2750402
Plain TextHaneda, M., Iijima, J., Koike, J. (2007) Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C. Applied Physics Letters, 90 (25). 252107pp. doi:10.1063/1.2750402
In(2007, June) Applied Physics Letters Vol. 90 (25) AIP Publishing

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Koike, J., Haneda, M., Iijima, J., Otsuka, Y., Sako, H., Neishi, K. (2007) Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn∕SiO2 interface. Journal of Applied Physics, 102 (4). 43527pp. doi:10.1063/1.2773699
Otsuka, Y., Koike, J., Sako, H., Ishibashi, K., Kawasaki, N., Chung, S. M., Tanaka, I. (2010) Graded composition and valence states in self-forming barrier layers at Cu–Mn/SiO2 interface. Applied Physics Letters, 96 (1). 12101pp. doi:10.1063/1.3269602
Koike, J., Wada, M. (2005) Self-forming diffusion barrier layer in Cu–Mn alloy metallization. Applied Physics Letters, 87 (4). 41911pp. doi:10.1063/1.1993759
Liu, C. J., Chen, J. S. (2002) Low leakage current Cu(Ti)/SiO2 interconnection scheme with a self-formed TiOx diffusion barrier. Applied Physics Letters, 80 (15). 2678-2680 doi:10.1063/1.1468913
Jin, Hao, Weber, K. J., Dang, N. C., Jellett, W. E. (2007) Defect generation at the Si–SiO2 interface following corona charging. Applied Physics Letters, 90 (26). 262109pp. doi:10.1063/1.2749867
Liu, C. Y., Chen, J. T., Chuang, Y. C., Ke, Lin, Wang, S. J. (2007) Electromigration-induced Kirkendall voids at the Cu∕Cu3Sn interface in flip-chip Cu∕Sn∕Cu joints. Applied Physics Letters, 90 (11). 112114pp. doi:10.1063/1.2714100
Hino, Aya, Okuno, Hiroyuki, Kugimiya, Toshihiro (2013) Study of adhesion and chemical bonds in the reaction layer formed at Cu-Mn interconnection/SiO2 interface. Journal of Applied Physics, 113 (17). 174902pp. doi:10.1063/1.4803500
Lin, L., Robertson, J. (2011) Atomic mechanism of electric dipole formed at high-K: SiO2 interface. Journal of Applied Physics, 109 (9). 94502pp. doi:10.1063/1.3583655
Kita, Koji, Toriumi, Akira (2009) Origin of electric dipoles formed at high-k/SiO2 interface. Applied Physics Letters, 94 (13). 132902pp. doi:10.1063/1.3110968
Rothschild, J. A., Eizenberg, M. (2009) Tuning of Fermi level position at HfNx/SiO2 interface. Applied Physics Letters, 94 (8). 81905pp. doi:10.1063/1.3089818
Chia, C. K., Zhang, Y. W., Wong, S. S., Yong, A. M., Chow, S. Y., Chua, S. J., Guo, J. (2007) Saturated dot density of InAs∕GaAs self-assembled quantum dots grown at high growth rate. Applied Physics Letters, 90 (16). 161906pp. doi:10.1063/1.2724776
 
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