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Gu, Gong, Nie, Shu, Feenstra, R. M., Devaty, R. P., Choyke, W. J., Chan, Winston K., Kane, Michael G. (2007) Field effect in epitaxial graphene on a silicon carbide substrate. Applied Physics Letters, 90 (25). 253507pp. doi:10.1063/1.2749839

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Reference TypeJournal (article/letter/editorial)
TitleField effect in epitaxial graphene on a silicon carbide substrate
JournalApplied Physics Letters
AuthorsGu, GongAuthor
Nie, ShuAuthor
Feenstra, R. M.Author
Devaty, R. P.Author
Choyke, W. J.Author
Chan, Winston K.Author
Kane, Michael G.Author
Year2007 (June 18)Volume90
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2749839Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8554672Long-form Identifiermindat:1:5:8554672:5
GUID0
Full ReferenceGu, Gong, Nie, Shu, Feenstra, R. M., Devaty, R. P., Choyke, W. J., Chan, Winston K., Kane, Michael G. (2007) Field effect in epitaxial graphene on a silicon carbide substrate. Applied Physics Letters, 90 (25). 253507pp. doi:10.1063/1.2749839
Plain TextGu, Gong, Nie, Shu, Feenstra, R. M., Devaty, R. P., Choyke, W. J., Chan, Winston K., Kane, Michael G. (2007) Field effect in epitaxial graphene on a silicon carbide substrate. Applied Physics Letters, 90 (25). 253507pp. doi:10.1063/1.2749839
In(2007, June) Applied Physics Letters Vol. 90 (25) AIP Publishing

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Nie, Shu, Feenstra, R. M., Ke, Y., Devaty, R. P., Choyke, W. J. (2008) Electronic states of chemically treated SiC surfaces. Journal of Applied Physics, 103 (1). 13709pp. doi:10.1063/1.2829804
Schadt, M., Pensl, G., Devaty, R. P., Choyke, W. J., Stein, R., Stephani, D. (1994) Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide. Applied Physics Letters, 65 (24). 3120-3122 doi:10.1063/1.112455
Hornos, T., Gali, A., Devaty, R. P., Choyke, W. J. (2005) Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study. Applied Physics Letters, 87 (21). 212114pp. doi:10.1063/1.2135493
Shishkin, Y., Choyke, W. J., Devaty, R. P. (2004) Photoelectrochemical etching of n-type 4H silicon carbide. Journal of Applied Physics, 96 (4). 2311-2322 doi:10.1063/1.1768612
Sridhara, S. G., Devaty, R. P., Choyke, W. J. (1998) Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å. Journal of Applied Physics, 84 (5). 2963-2964 doi:10.1063/1.368403
Aradi, B., Deák, P., Son, N. T., Janzén, E., Choyke, W. J., Devaty, R. P. (2001) Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide. Applied Physics Letters, 79 (17). 2746-2748 doi:10.1063/1.1410337
Luxmi, , Fisher, P. J., Srivastava, N., Feenstra, R. M., Sun, Yugang, Kedzierski, J., Healey, P., Gu, Gong (2009) Morphology of graphene on SiC(0001¯) surfaces. Applied Physics Letters, 95 (7). 73101pp. doi:10.1063/1.3207757
Tedesco, J. L., VanMil, B. L., Myers-Ward, R. L., McCrate, J. M., Kitt, S. A., Campbell, P. M., Jernigan, G. G., Culbertson, J. C., Eddy, C. R., Gaskill, D. K. (2009) Hall effect mobility of epitaxial graphene grown on silicon carbide. Applied Physics Letters, 95 (12). 122102pp. doi:10.1063/1.3224887
MacMillan, M. F., Devaty, R. P., Choyke, W. J. (1993) Infrared reflectance of thin aluminum nitride films on various substrates. Applied Physics Letters, 62 (7). 750-752 doi:10.1063/1.108595
Bradshaw, J. L., Devaty, R. P., Choyke, W. J., Messham, R. L. (1989) Below‐band‐gap photon recycling in AlxGa1−xAs. Applied Physics Letters, 55 (2). 165-167 doi:10.1063/1.102131
Yoganathan, M., Suttrop, W., Devaty, R. P., Choyke, W. J. (1994) Identification of {2110} and {1010} Laue patterns of hexagonal and rhombohedral silicon carbide polytypes. Journal of Applied Crystallography, 27 (4). 497-503 doi:10.1107/s0021889893012439
 
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