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Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]. Applied Physics Letters, 90 (24). 249901pp. doi:10.1063/1.2744473

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]
JournalApplied Physics Letters
AuthorsKröger, R.Author
Paskova, T.Author
Figge, S.Author
Hommel, D.Author
Rosenauer, A.Author
Monemar, B.Author
Year2007 (June 11)Volume90
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2744473Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8554522Long-form Identifiermindat:1:5:8554522:1
GUID0
Full ReferenceKröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]. Applied Physics Letters, 90 (24). 249901pp. doi:10.1063/1.2744473
Plain TextKröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]. Applied Physics Letters, 90 (24). 249901pp. doi:10.1063/1.2744473
In(2007, June) Applied Physics Letters Vol. 90 (24) AIP Publishing

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Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Interfacial structure of a-plane GaN grown on r-plane sapphire. Applied Physics Letters, 90 (8). 81918pp. doi:10.1063/1.2696309
Tuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B., Kersting, R. (2007) Defect distribution in a-plane GaN on Al2O3. Applied Physics Letters, 90 (12). 121915pp. doi:10.1063/1.2715128
Kröger, R., Paskova, T., Monemar, B., Figge, S., Hommel, D., Rosenauer, A. (2007) Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire. physica status solidi (c), 4 (7). 2564-2567 doi:10.1002/pssc.200674909
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Paskov, P. P., Schifano, R., Monemar, B., Paskova, T., Figge, S., Hommel, D. (2005) Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. Journal of Applied Physics, 98 (9). 93519pp. doi:10.1063/1.2128496
Roder, C., Einfeldt, S., Figge, S., Hommel, D., Paskova, T., Monemar, B., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S. (2006) Strain ina-plane GaN layers grown onr-plane sapphire substrates. physica status solidi (a), 203 (7). 1672-1675 doi:10.1002/pssa.200565447
Tuomisto, F., Paskova, T., Figge, S., Hommel, D., Monemar, B. (2007) Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy. Journal of Crystal Growth, 300 (1). 251-253 doi:10.1016/j.jcrysgro.2006.11.040
Figge, S., Böttcher, T., Dennemarck, J., Kröger, R., Paskova, T., Monemar, B., Hommel, D. (2005) Optoelectronic devices on bulk GaN. Journal of Crystal Growth, 281 (1). 101-106 doi:10.1016/j.jcrysgro.2005.03.017
Paskov, P.P., Schifano, R., Paskova, T., Malinauskas, T., Bergman, J.P., Monemar, B., Figge, S., Hommel, D. (2006) Structural defect-related emissions in nonpolar a-plane GaN. Physica B: Condensed Matter, 376. 473-476 doi:10.1016/j.physb.2005.12.121
Darakchieva, V., Paskov, P. P., Paskova, T., Valcheva, E., Monemar, B., Heuken, M. (2003) Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy. Applied Physics Letters, 82 (5). 703-705 doi:10.1063/1.1542931
 
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