Zhou, X., Dayeh, S. A., Wang, D., Yu, E. T. (2007) Scanning gate microscopy of InAs nanowires. Applied Physics Letters, 90 (23). 233118pp. doi:10.1063/1.2746422

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Reference Type	Journal (article/letter/editorial)
Title	Scanning gate microscopy of InAs nanowires
Journal	Applied Physics Letters
Authors	Zhou, X.		Author
	Dayeh, S. A.		Author
	Wang, D.		Author
	Yu, E. T.		Author
Year	2007 (June 4)	Volume	90
Issue	23
Publisher	AIP Publishing
DOI	doi:10.1063/1.2746422Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8554471	Long-form Identifier	mindat:1:5:8554471:8
GUID	0
Full Reference	Zhou, X., Dayeh, S. A., Wang, D., Yu, E. T. (2007) Scanning gate microscopy of InAs nanowires. Applied Physics Letters, 90 (23). 233118pp. doi:10.1063/1.2746422
Plain Text	Zhou, X., Dayeh, S. A., Wang, D., Yu, E. T. (2007) Scanning gate microscopy of InAs nanowires. Applied Physics Letters, 90 (23). 233118pp. doi:10.1063/1.2746422
In	(2007, June) Applied Physics Letters Vol. 90 (23) AIP Publishing

	Zhou, X., Dayeh, S. A., Aplin, D., Wang, D., Yu, E. T. (2006) Direct observation of ballistic and drift carrier transport regimes in InAs nanowires. Applied Physics Letters, 89 (5). 53113pp. doi:10.1063/1.2236589
	Law, J. J. M., Dayeh, S. A., Wang, D., Yu, E. T. (2009) Scanning capacitance characterization of potential screening in InAs nanowire devices. Journal of Applied Physics, 105 (1). 14306pp. doi:10.1063/1.3055367
	Gildemeister, A. E., Ihn, T., Sigrist, M., Ensslin, K., Driscoll, D. C., Gossard, A. C. (2007) In situ treatment of a scanning gate microscopy tip. Applied Physics Letters, 90 (21). 213113pp. doi:10.1063/1.2742314
	Dayeh, Shadi A., Soci, Cesare, Yu, Paul K. L., Yu, Edward T., Wang, Deli (2007) Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors. Applied Physics Letters, 90 (16). 162112pp. doi:10.1063/1.2728762
	*Lew, A. Y., Yu, E. T., Chow, D. H., Miles, R. H. (1994) Scanning tunneling microscopy of InAs/Ga1−xInxSb superlattices. Applied Physics Letters, 65 (2). 201-203 doi:10.1063/1.112673*
	*Sarkar, Angik, Bhattacharyya, T. K. (2007) Universal Toffoli gate in ballistic nanowires. Applied Physics Letters, 90 (17). 173101pp. doi:10.1063/1.2731521*
	Das, S., Das, K., Singha, R. K., Dhar, A., Ray, S. K. (2007) Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices. Applied Physics Letters, 91 (23). 233118pp. doi:10.1063/1.2821114
	Zhou, X., Yu, E. T., Florescu, D. I., Ramer, J. C., Lee, D. S., Ting, S. M., Armour, E. A. (2005) Observation of In concentration variations in InGaN∕GaN quantum-well heterostructures by scanning capacitance microscopy. Applied Physics Letters, 86 (20). 202113pp. doi:10.1063/1.1929871
	Le, Son T., Jannaty, P., Zaslavsky, A., Dayeh, S. A., Picraux, S. T. (2010) Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires. Applied Physics Letters, 96 (26). 262102pp. doi:10.1063/1.3457862
	Boyle, Michael G., Mitra, J., Dawson, P. (2009) Infrared emission from tunneling electrons: The end of the rainbow in scanning tunneling microscopy. Applied Physics Letters, 94 (23). 233118pp. doi:10.1063/1.3154563
	*Zhou, Z. H., Gao, X. S., Wang, John, Fujihara, K., Ramakrishna, S., Nagarajan, V. (2007) Giant strain in PbZr0.2Ti0.8O3 nanowires. Applied Physics Letters, 90 (5). 52902pp. doi:10.1063/1.2435941*

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Zhou, X., Dayeh, S. A., Wang, D., Yu, E. T. (2007) Scanning gate microscopy of InAs nanowires. Applied Physics Letters, 90 (23). 233118pp. doi:10.1063/1.2746422

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