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Chang, C. W., Thompson, C. V., Gan, C. L., Pey, K. L., Choi, W. K., Lim, Y. K. (2007) Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Applied Physics Letters, 90 (19). 193505pp. doi:10.1063/1.2714315

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Reference TypeJournal (article/letter/editorial)
TitleEffects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects
JournalApplied Physics Letters
AuthorsChang, C. W.Author
Thompson, C. V.Author
Gan, C. L.Author
Pey, K. L.Author
Choi, W. K.Author
Lim, Y. K.Author
Year2007 (May 7)Volume90
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.2714315Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553893Long-form Identifiermindat:1:5:8553893:9
GUID0
Full ReferenceChang, C. W., Thompson, C. V., Gan, C. L., Pey, K. L., Choi, W. K., Lim, Y. K. (2007) Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Applied Physics Letters, 90 (19). 193505pp. doi:10.1063/1.2714315
Plain TextChang, C. W., Thompson, C. V., Gan, C. L., Pey, K. L., Choi, W. K., Lim, Y. K. (2007) Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Applied Physics Letters, 90 (19). 193505pp. doi:10.1063/1.2714315
In(2007, May) Applied Physics Letters Vol. 90 (19) AIP Publishing

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Heryanto, A., Pey, K. L., Lim, Y. K., Liu, W., Raghavan, N., Wei, J., Gan, C. L., Lim, M. K., Tan, J. B. (2011) The effect of stress migration on electromigration in dual damascene copper interconnects. Journal of Applied Physics, 109 (1). 13716pp. doi:10.1063/1.3531393
Gan, C. L., Thompson, C. V., Pey, K. L., Choi, W. K., Tay, H. L., Yu, B., Radhakrishnan, M. K. (2001) Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization. Applied Physics Letters, 79 (27). 4592-4594 doi:10.1063/1.1428410
Chang, C. W., Choi, Z.-S., Thompson, C. V., Gan, C. L., Pey, K. L., Choi, W. K., Hwang, N. (2006) Electromigration resistance in a short three-contact interconnect tree. Journal of Applied Physics, 99 (9). 94505pp. doi:10.1063/1.2196114
Gan, C. L., Thompson, C. V., Pey, K. L., Choi, W. K. (2003) Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect trees. Journal of Applied Physics, 94 (2). 1222-1228 doi:10.1063/1.1585119
Heryanto, A., Pey, K. L., Lim, Y. K., Raghavan, N., Liu, W., Wei, J., Gan, C. L., Tan, J. B. (2011) Stress migration risk on electromigration reliability in advanced narrow line copper interconnects. Journal of Applied Physics, 110 (8). 83702pp. doi:10.1063/1.3651385
Leong, H. L., Gan, C. L., Thompson, C. V., Pey, K. L., Li, H. Y. (2009) Electromigration-induced bond improvement for three-dimensional integrated circuits. Applied Physics Letters, 94 (8). 81901pp. doi:10.1063/1.3081456
Leong, H. L., Gan, C. L., Made, R. I., Thompson, C. V., Pey, K. L., Li, H. Y. (2009) Experimental characterization and modeling of the contact resistance of Cu–Cu bonded interconnects. Journal of Applied Physics, 105 (3). 33514pp. doi:10.1063/1.3074503
Choi, Zung-Sun, Mönig, Reiner, Thompson, Carl V. (2007) Dependence of the electromigration flux on the crystallographic orientations of different grains in polycrystalline copper interconnects. Applied Physics Letters, 90 (24). 241913pp. doi:10.1063/1.2742285
Leong, H. L., Gan, C. L., Thompson, C. V., Pey, K. L., Li, H. Y. (2007) Application of contact theory to metal-metal bonding of silicon wafers. Journal of Applied Physics, 102 (10). 103510pp. doi:10.1063/1.2811724
Hsu, Y. L., Fang, Y. K., Chiang, Y. T., Chen, S. F., Lin, C. Y., Chou, T. H., Chang, S. H. (2006) Failure Mechanism of Electromigration in Via Sidewall for Copper Dual Damascene Interconnection. Journal of the Electrochemical Society, 153. doi:10.1149/1.2209588
Chandra, W., Ang, L. K., Pey, K. L., Ng, C. M. (2007) Two-dimensional analytical Mott-Gurney law for a trap-filled solid. Applied Physics Letters, 90 (15). 153505pp. doi:10.1063/1.2721382
 
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