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Lee, Chi-Ling, Lee, Wei-I (2007) Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide. Applied Physics Letters, 90 (18). 181125pp. doi:10.1063/1.2737122

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Reference TypeJournal (article/letter/editorial)
TitleEffects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide
JournalApplied Physics Letters
AuthorsLee, Chi-LingAuthor
Lee, Wei-IAuthor
Year2007 (April 30)Volume90
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.2737122Search in ResearchGate
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Mindat Ref. ID8553884Long-form Identifiermindat:1:5:8553884:1
GUID0
Full ReferenceLee, Chi-Ling, Lee, Wei-I (2007) Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide. Applied Physics Letters, 90 (18). 181125pp. doi:10.1063/1.2737122
Plain TextLee, Chi-Ling, Lee, Wei-I (2007) Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide. Applied Physics Letters, 90 (18). 181125pp. doi:10.1063/1.2737122
In(2007, April) Applied Physics Letters Vol. 90 (18) AIP Publishing

See Also

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Jang, Ja-Soon, Seong, Tae-Yeon (2007) Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p‐In0.15Ga0.85N∕p‐GaN layer. Journal of Applied Physics, 101 (1). 13711pp. doi:10.1063/1.2424320
Kim, Soo Young, Jang, Ho Won, Lee, Jong-Lam (2003) Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN. Applied Physics Letters, 82 (1). 61-63 doi:10.1063/1.1534630
Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki (2001) Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer. Applied Physics Letters, 79 (16). 2588-2590 doi:10.1063/1.1410336
Lee, Younjoo, Lee, Hyunbok, Park, Soohyung, Yi, Yeonjin (2012) Energy level alignment at the interfaces between typical electrodes and nucleobases: Al/adenine/indium-tin-oxide and Al/thymine/indium-tin-oxide. Applied Physics Letters, 101 (23). 233305pp. doi:10.1063/1.4769438
Huang, Hsin-Hsiung, Zeng, Hung-Yu, Lee, Chi-Ling, Lee, Shih-Chang, Lee, Wei-I (2006) Extended microtunnels in GaN prepared by wet chemical etch. Applied Physics Letters, 89 (20). 202115pp. doi:10.1063/1.2374841
Wang, R. X., Xu, S. J., Beling, C. D., Cheung, C. K. (2007) Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/n-GaN Schottky contacts [Appl. Phys. Lett. 90, 046101 (2007)]”. Applied Physics Letters, 90 (4). 46102pp. doi:10.1063/1.2435356
Chae, S. W., Kim, K. C., Kim, D. H., Kim, T. G., Yoon, S. K., Oh, B. W., Kim, D. S., Kim, H. K., Sung, Y. M. (2007) Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN. Applied Physics Letters, 90 (18). 181101pp. doi:10.1063/1.2731672
Lin, Yow-Jon, Tsai, Chia-Lung, Liu, Day-Shan (2007) Comment on “Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts” [Appl. Phys. Lett. 89, 033503 (2006)]. Applied Physics Letters, 90 (4). 46101pp. doi:10.1063/1.2435354
Lee, Chi-Ling, Lee, Wei-I (2007) Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l457
Chuo, C.-C., Lee, C.-M., Nee, T.-E., Chyi, J.-I. (2000) Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells. Applied Physics Letters, 76 (26). 3902-3904 doi:10.1063/1.126815
Kim, Keunjoo, Choi, Jaeho, Jeon, Sang Cheol, Kim, Jin Soo, Lee, Hee Mok (2007) Photonic crystal effect on light emission from InGaN∕GaN multi-quantum-well structures. Applied Physics Letters, 90 (18). 181115pp. doi:10.1063/1.2735927
 
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