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Chen, N. C., Yang, Y. K., Wang, Y. N., Huang, Y. C. (2007) Heat flow in AlGaInP∕GaAs light-emitting diodes. Applied Physics Letters, 90 (18). 181104pp. doi:10.1063/1.2734494

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Reference TypeJournal (article/letter/editorial)
TitleHeat flow in AlGaInP∕GaAs light-emitting diodes
JournalApplied Physics Letters
AuthorsChen, N. C.Author
Yang, Y. K.Author
Wang, Y. N.Author
Huang, Y. C.Author
Year2007 (April 30)Volume90
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.2734494Search in ResearchGate
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Mindat Ref. ID8553773Long-form Identifiermindat:1:5:8553773:6
GUID0
Full ReferenceChen, N. C., Yang, Y. K., Wang, Y. N., Huang, Y. C. (2007) Heat flow in AlGaInP∕GaAs light-emitting diodes. Applied Physics Letters, 90 (18). 181104pp. doi:10.1063/1.2734494
Plain TextChen, N. C., Yang, Y. K., Wang, Y. N., Huang, Y. C. (2007) Heat flow in AlGaInP∕GaAs light-emitting diodes. Applied Physics Letters, 90 (18). 181104pp. doi:10.1063/1.2734494
In(2007, April) Applied Physics Letters Vol. 90 (18) AIP Publishing

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Chen, N. C., Wang, Y. N., Tseng, C. Y., Yang, Y. K. (2006) Determination of junction temperature in AlGaInP∕GaAs light emitting diodes by self-excited photoluminescence signal. Applied Physics Letters, 89 (10). 101114pp. doi:10.1063/1.2345587
Chen, N. C., Lien, W. C., Yang, Y. K., Shen, C., Wang, Y. S., Chen, J. F. (2009) Spectral shape and broadening of emission from AlGaInP light-emitting diodes. Journal of Applied Physics, 106 (7). 74514pp. doi:10.1063/1.3243319
Chen, N. C., Yang, Y. K., Lien, W. C., Tseng, C. Y. (2007) Forward current-voltage characteristics of an AlGaInP light-emitting diode. Journal of Applied Physics, 102 (4). 43706pp. doi:10.1063/1.2772530
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Horng, R. H., Huang, S. H., Wuu, D. S., Chiu, C. Y. (2003) AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding. Applied Physics Letters, 82 (23). 4011-4013 doi:10.1063/1.1579132
Horng, R. H., Wuu, D. S., Wei, S. C., Tseng, C. Y., Huang, M. F., Chang, K. H., Liu, P. H., Lin, K. C. (1999) AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding. Applied Physics Letters, 75 (20). 3054-3056 doi:10.1063/1.125228
Li, Y.-L., Huang, Y.-R., Lai, Y.-H. (2007) Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness. Applied Physics Letters, 91 (18). 181113pp. doi:10.1063/1.2805197
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Lee, Y. J., Lin, P. C., Lu, T. C., Kuo, H. C., Wang, S. C. (2007) Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes. Applied Physics Letters, 90 (16). 161115pp. doi:10.1063/1.2722672
Divayana, Y., Sun, X. W. (2007) Efficient electrofluorescent organic light-emitting diodes by sequential doping. Applied Physics Letters, 90 (20). 203509pp. doi:10.1063/1.2728753
 
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