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Kittl, J. A., Lauwers, A., Demeurisse, C., Vrancken, C., Kubicek, S., Absil, P., Biesemans, S. (2007) Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25nm Ni fully silicided gates. Applied Physics Letters, 90 (17). 172107pp. doi:10.1063/1.2732820

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Reference TypeJournal (article/letter/editorial)
TitleDirect evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25nm Ni fully silicided gates
JournalApplied Physics Letters
AuthorsKittl, J. A.Author
Lauwers, A.Author
Demeurisse, C.Author
Vrancken, C.Author
Kubicek, S.Author
Absil, P.Author
Biesemans, S.Author
Year2007 (April 23)Volume90
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2732820Search in ResearchGate
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Mindat Ref. ID8553689Long-form Identifiermindat:1:5:8553689:8
GUID0
Full ReferenceKittl, J. A., Lauwers, A., Demeurisse, C., Vrancken, C., Kubicek, S., Absil, P., Biesemans, S. (2007) Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25nm Ni fully silicided gates. Applied Physics Letters, 90 (17). 172107pp. doi:10.1063/1.2732820
Plain TextKittl, J. A., Lauwers, A., Demeurisse, C., Vrancken, C., Kubicek, S., Absil, P., Biesemans, S. (2007) Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25nm Ni fully silicided gates. Applied Physics Letters, 90 (17). 172107pp. doi:10.1063/1.2732820
In(2007, April) Applied Physics Letters Vol. 90 (17) AIP Publishing

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