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Höglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L. (2007) Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films. Applied Physics Letters, 90 (17). 174106pp. doi:10.1063/1.2731520

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Reference TypeJournal (article/letter/editorial)
TitleTopotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films
JournalApplied Physics Letters
AuthorsHöglund, C.Author
Beckers, M.Author
Schell, N.Author
Borany, J. v.Author
Birch, J.Author
Hultman, L.Author
Year2007 (April 23)Volume90
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2731520Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553640Long-form Identifiermindat:1:5:8553640:9
GUID0
Full ReferenceHöglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L. (2007) Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films. Applied Physics Letters, 90 (17). 174106pp. doi:10.1063/1.2731520
Plain TextHöglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L. (2007) Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films. Applied Physics Letters, 90 (17). 174106pp. doi:10.1063/1.2731520
In(2007, April) Applied Physics Letters Vol. 90 (17) AIP Publishing

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Beckers, M., Schell, N., Martins, R. M. S., Mücklich, A., Möller, W., Hultman, L. (2007) Nucleation and growth of Ti2AlN thin films deposited by reactive magnetron sputtering onto MgO(111). Journal of Applied Physics, 102 (7). 74916pp. doi:10.1063/1.2786871
Beckers, M., Schell, N., Martins, R. M. S., Mücklich, A., Möller, W., Hultman, L. (2006) Microstructure and nonbasal-plane growth of epitaxial Ti2AlN thin films. Journal of Applied Physics, 99 (3). 34902pp. doi:10.1063/1.2161943
Joelsson, T., Hörling, A., Birch, J., Hultman, L. (2005) Single-crystal Ti2AlN thin films. Applied Physics Letters, 86 (11). 111913pp. doi:10.1063/1.1882752
Seppänen, T., Hultman, L., Birch, J., Beckers, M., Kreissig, U. (2007) Deviations from Vegard’s rule in Al1−xInxN (0001) alloy thin films grown by magnetron sputter epitaxy. Journal of Applied Physics, 101 (4). 43519pp. doi:10.1063/1.2450675
Höglund, C., Alling, B., Jensen, J., Hultman, L., Birch, J., Hall-Wilton, R. (2015) Growth and oxidization stability of cubic Zr1−xGdxN solid solution thin films. Journal of Applied Physics, 117 (19). 195301pp. doi:10.1063/1.4921167
Beckers, M., Schell, N., Martins, R. M. S., Mücklich, A., Möller, W. (2006) Phase stability of epitaxially grown Ti2AlN thin films. Applied Physics Letters, 89 (7). 74101pp. doi:10.1063/1.2335681
Joelsson, T., Flink, A., Birch, J., Hultman, L. (2007) Deposition of single-crystal Ti2AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target. Journal of Applied Physics, 102 (7). 74918pp. doi:10.1063/1.2785958
Beckers, M., Höglund, C., Baehtz, C., Martins, R. M. S., Persson, P. O. Å., Hultman, L., Möller, W. (2009) The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti–Al–N thin films. Journal of Applied Physics, 106 (6). 64915pp. doi:10.1063/1.3208065
Valcheva, E., Birch, J., Persson, P. O. Å., Tungasmita, S., Hultman, L. (2006) Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Journal of Applied Physics, 100 (12). 123514pp. doi:10.1063/1.2402971
Petrov, I., Mojab, E., Powell, R. C., Greene, J. E., Hultman, L., Sundgren, J.‐E. (1992) Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction. Applied Physics Letters, 60 (20). 2491-2493 doi:10.1063/1.106943
Seppänen, T., Hultman, L., Birch, J. (2006) 248nm cathodoluminescence in Al1−xInxN(0001) thin films grown on lattice-matched Ti1−yZryN(111) seed layers by low temperature magnetron sputter epitaxy. Applied Physics Letters, 89 (18). 181928pp. doi:10.1063/1.2382746
 
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