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Abe, Yasuhiro, Miyata, Noriyuki, Shiraki, Yasuhiro, Yasuda, Tetsuji (2007) Dipole formation at direct-contact HfO2∕Si interface. Applied Physics Letters, 90 (17). 172906pp. doi:10.1063/1.2731514

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Reference TypeJournal (article/letter/editorial)
TitleDipole formation at direct-contact HfO2∕Si interface
JournalApplied Physics Letters
AuthorsAbe, YasuhiroAuthor
Miyata, NoriyukiAuthor
Shiraki, YasuhiroAuthor
Yasuda, TetsujiAuthor
Year2007 (April 23)Volume90
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2731514Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553634Long-form Identifiermindat:1:5:8553634:8
GUID0
Full ReferenceAbe, Yasuhiro, Miyata, Noriyuki, Shiraki, Yasuhiro, Yasuda, Tetsuji (2007) Dipole formation at direct-contact HfO2∕Si interface. Applied Physics Letters, 90 (17). 172906pp. doi:10.1063/1.2731514
Plain TextAbe, Yasuhiro, Miyata, Noriyuki, Shiraki, Yasuhiro, Yasuda, Tetsuji (2007) Dipole formation at direct-contact HfO2∕Si interface. Applied Physics Letters, 90 (17). 172906pp. doi:10.1063/1.2731514
In(2007, April) Applied Physics Letters Vol. 90 (17) AIP Publishing

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Miyata, Noriyuki, Yasuda, Tetsuji, Abe, Yasuhiro (2011) Kelvin probe study on formation of electric dipole at direct-contact HfO2/Si interfaces. Journal of Applied Physics, 110 (7). 74115pp. doi:10.1063/1.3646398
Abe, Yasuhiro, Miyata, Noriyuki, Nohira, Hiroshi, Yasuda, Tetsuji (2010) Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors. Japanese Journal of Applied Physics, 49 (6) 60202 doi:10.1143/jjap.49.060202
Miyata, Noriyuki, Abe, Yasuhiro, Yasuda, Tetsuji (2013) Effect of interfacial Si oxidation on interface dipoles in HfO2/Si structures. Journal of Physics D: Applied Physics, 46. 315304pp. doi:10.1088/0022-3727/46/31/315304
Miyata, Noriyuki, Yasuda, Tetsuji, Abe, Yasuhiro (2010) Structural degradation of thin HfO2 film on Ge during the postdeposition annealing. Journal of Applied Physics, 107 (10). 103536pp. doi:10.1063/1.3415542
Miyata, Noriyuki (2006) Two-step behavior of initial oxidation at HfO2∕Si interface. Applied Physics Letters, 89 (10). 102903pp. doi:10.1063/1.2337878
Ohtake, Akihiro, Mano, Takaaki, Miyata, Noriyuki, Mori, Takahiro, Yasuda, Tetsuji (2014) Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors. Applied Physics Letters, 104 (3). 32101pp. doi:10.1063/1.4862542
Miyata, Noriyuki (2018) Low temperature preparation of HfO2/SiO2stack structure for interface dipole modulation. Applied Physics Letters, 113 (25). 251601pp. doi:10.1063/1.5057398
Yasuda, Tetsuji, Miyata, Noriyuki, Ohtake, Akihiro (2008) Influence of initial surface reconstruction on the interface structure of HfO2/GaAs. Applied Surface Science, 254. 7565-7568 doi:10.1016/j.apsusc.2008.01.032
Miyata, Noriyuki, Ohtake, Akihiro, Ichikawa, Masakazu, Mori, Takahiro, Yasuda, Tetsuji (2014) Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces. Applied Physics Letters, 104 (23). 232104pp. doi:10.1063/1.4882643
Abe, Yasuhiro, Miyata, Noriyuki, Ikenaga, Eiji, Suzuki, Haruhiko, Kitamura, Koji, Igarashi, Satoru, Nohira, Hiroshi (2009) Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures. Japanese Journal of Applied Physics, 48 (4) 41201 doi:10.1143/jjap.48.041201
Maeda, Tatsuro, Yasuda, Tetsuji, Nishizawa, Masayasu, Miyata, Noriyuki, Morita, Yukinori, Takagi, Shinichi (2004) Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates. Applied Physics Letters, 85 (15). 3181-3183 doi:10.1063/1.1805194
 
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