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Massé, N. F., Adams, A. R., Sweeney, S. J. (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature. Applied Physics Letters, 90 (16). 161113pp. doi:10.1063/1.2722041

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Reference TypeJournal (article/letter/editorial)
TitleExperimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature
JournalApplied Physics Letters
AuthorsMassé, N. F.Author
Adams, A. R.Author
Sweeney, S. J.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2722041Search in ResearchGate
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Mindat Ref. ID8553451Long-form Identifiermindat:1:5:8553451:7
GUID0
Full ReferenceMassé, N. F., Adams, A. R., Sweeney, S. J. (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature. Applied Physics Letters, 90 (16). 161113pp. doi:10.1063/1.2722041
Plain TextMassé, N. F., Adams, A. R., Sweeney, S. J. (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature. Applied Physics Letters, 90 (16). 161113pp. doi:10.1063/1.2722041
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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Massé, N. F., Homeyer, E., Marko, I. P., Adams, A. R., Sweeney, S. J., Dehaese, O., Piron, R., Grillot, F., Loualiche, S. (2007) Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers. Applied Physics Letters, 91 (13). 131113pp. doi:10.1063/1.2790777
Jin, S. R., Sweeney, S. J., Ahmad, C. N., Adams, A. R., Murdin, B. N. (2004) Radiative and Auger recombination in 1.3μm InGaAsP and 1.5μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures. Applied Physics Letters, 85 (3). 357-359 doi:10.1063/1.1772871
Sweeney, S. J., McConville, D., Massé, N. F., Bouyssou, R.-X., Adams, A. R., Ahmad, C. N., Hanke, C. (2004) Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP-based quantum well lasers. physica status solidi (b), 241 (14). 3391-3398 doi:10.1002/pssb.200405242
Massé, N. F., Sweeney, S. J., Marko, I. P., Adams, A. R., Hatori, N., Sugawara, M. (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers. Applied Physics Letters, 89 (19). 191118pp. doi:10.1063/1.2387114
Jin, S. R., Sweeney, S. J., Tomić, S., Adams, A. R., Riechert, H. (2003) Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure. Applied Physics Letters, 82 (14). 2335-2337 doi:10.1063/1.1566468
Marko, I. P., Massé, N. F., Sweeney, S. J., Andreev, A. D., Adams, A. R., Hatori, N., Sugawara, M. (2005) Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers. Applied Physics Letters, 87 (21). 211114pp. doi:10.1063/1.2135204
Fuchs, G., Schiedel, C., Hangleiter, A., Härle, V., Scholz, F. (1993) Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum‐well lasers. Applied Physics Letters, 62 (4). 396-398 doi:10.1063/1.108941
Dutta, N. K., Nelson, R. J. (1981) Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination. Applied Physics Letters, 38 (6). 407-409 doi:10.1063/1.92380
Marko, I. P., Adams, A. R., Sweeney, S. J., Massé, N. F., Krebs, R., Reithmaier, J. P., Forchel, A., Mowbray, D. J., Skolnick, M. S., Liu, H. Y., Groom, K. M., Hatori, N., Sugawara, M. (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. physica status solidi (b), 244 (1). 82-86 doi:10.1002/pssb.200672544
Chamings, J., Adams, A. R., Sweeney, S. J., Kunert, B., Volz, K., Stolz, W. (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers. Applied Physics Letters, 93 (10). 101108pp. doi:10.1063/1.2975845
Berthold, K., Levi, A. F. J., Tanbun‐Ek, T., Logan, R. A., Chu, S. N. G. (1989) Voltage‐controlledQswitching of InGaAs/InP single quantum well lasers. Applied Physics Letters, 55 (19). 1940-1942 doi:10.1063/1.102171
 
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