Fukata, N., Chen, J., Sekiguchi, T., Matsushita, S., Oshima, T., Uchida, N., Murakami, K., Tsurui, T., Ito, S. (2007) Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation. Applied Physics Letters, 90 (15). 153117pp. doi:10.1063/1.2721377

See Also

These are possibly similar items as determined by title/reference text matching only.

	Fukata, N., Matsushita, S., Tsurui, T., Chen, J., Sekiguchi, T., Uchida, N., Murakami, K. (2007) Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation. Physica B: Condensed Matter, 401. 523-526 doi:10.1016/j.physb.2007.09.013
	Fukata, N., Chen, J., Sekiguchi, T., Okada, N., Murakami, K., Tsurui, T., Ito, S. (2006) Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation. Applied Physics Letters, 89 (20). 203109pp. doi:10.1063/1.2372698
	Fukata, N., Oshima, T., Murakami, K., Kizuka, T., Tsurui, T., Ito, S. (2005) Phonon confinement effect of silicon nanowires synthesized by laser ablation. Applied Physics Letters, 86 (21). 213112pp. doi:10.1063/1.1931055
	Fukata, N., Matsushita, S., Okada, N., Chen, J., Sekiguchi, T., Uchida, N., Murakami, K. (2008) Impurity doping in silicon nanowires synthesized by laser ablation. Applied Physics A, 93. 589-592 doi:10.1007/s00339-008-4699-4
	Fukata, N., Oshima, T., Okada, N., Murakami, K., Kizuka, T., Tsurui, T., Ito, S. (2006) Phonon confinement and self-limiting oxidation effect of silicon nanowires synthesized by laser ablation. Journal of Applied Physics, 100 (2). 24311pp. doi:10.1063/1.2218386
	Fukata, N., Mitome, M., Bando, Y., Seoka, M., Matsushita, S., Murakami, K., Chen, J., Sekiguchi, T. (2008) Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation. Applied Physics Letters, 93 (20). 203106pp. doi:10.1063/1.3033226
	Fukata, N., Oshima, T., Okada, N., Kizuka, T., Tsurui, T., Ito, S., Murakami, K. (2006) Phonon confinement in silicon nanowires synthesized by laser ablation. Physica B: Condensed Matter, 376. 864-867 doi:10.1016/j.physb.2005.12.216
	Fukata, N., Seoka, M., Saito, N., Sato, K., Chen, J., Sekiguchi, T., Murakami, K. (2009) Doping and segregation of impurity atoms in silicon nanowires. Physica B: Condensed Matter, 404 (23). 5200-5202 doi:10.1016/j.physb.2009.08.270
	Ishioka, K., Kitajima, M., Tateishi, S., Nakanoya, K., Fukata, N., Mori, T., Murakami, K., Hishita, S. (1999) Hydrogen molecules trapped by multivacancies in silicon. Physical Review B, 60 (15) 10852-10854 doi:10.1103/physrevb.60.10852
	Zhang, Y. F., Tang, Y. H., Wang, N., Yu, D. P., Lee, C. S., Bello, I., Lee, S. T. (1998) Silicon nanowires prepared by laser ablation at high temperature. Applied Physics Letters, 72 (15). 1835-1837 doi:10.1063/1.121199
	Fukata, Naoki, Sasaki, Shinichi, Fujimura, Shuzo, Haneda, Hajime, Murakami, Kouichi (1996) Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon. Japanese Journal of Applied Physics, 35. 3937-3941 doi:10.1143/jjap.35.3937