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Slotte, J., Tuomisto, F., Saarinen, K., Moe, C. G., Keller, S., DenBaars, S. P. (2007) Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films. Applied Physics Letters, 90 (15). 151908pp. doi:10.1063/1.2721132

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
JournalApplied Physics Letters
AuthorsSlotte, J.Author
Tuomisto, F.Author
Saarinen, K.Author
Moe, C. G.Author
Keller, S.Author
DenBaars, S. P.Author
Year2007 (April 9)Volume90
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2721132Search in ResearchGate
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Mindat Ref. ID8553349Long-form Identifiermindat:1:5:8553349:3
GUID0
Full ReferenceSlotte, J., Tuomisto, F., Saarinen, K., Moe, C. G., Keller, S., DenBaars, S. P. (2007) Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films. Applied Physics Letters, 90 (15). 151908pp. doi:10.1063/1.2721132
Plain TextSlotte, J., Tuomisto, F., Saarinen, K., Moe, C. G., Keller, S., DenBaars, S. P. (2007) Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films. Applied Physics Letters, 90 (15). 151908pp. doi:10.1063/1.2721132
In(2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing

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Cantu, P., Wu, F., Waltereit, P., Keller, S., Romanov, A. E., Mishra, U. K., DenBaars, S. P., Speck, J. S. (2003) Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films. Applied Physics Letters, 83 (4). 674-676 doi:10.1063/1.1595133
Katona, T. M., Cantu, P., Keller, S., Wu, Y., Speck, J. S., DenBaars, S. P. (2004) Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN. Applied Physics Letters, 84 (24). 5025-5027 doi:10.1063/1.1763634
Keller, S., Dora, Y., Wu, F., Chen, X., Chowdury, S., DenBaars, S. P., Speck, J. S., Mishra, U. K. (2010) Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition. Applied Physics Letters, 97 (14). 142109pp. doi:10.1063/1.3499428
Sun, C.-K., Vallée, F., Keller, S., Bowers, J. E., DenBaars, S. P. (1997) Femtosecond studies of carrier dynamics in InGaN. Applied Physics Letters, 70 (15). 2004-2006 doi:10.1063/1.118803
Keller, S., Keller, B. P., Wu, Y.‐F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K., DenBaars, S. P. (1996) Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition. Applied Physics Letters, 68 (11). 1525-1527 doi:10.1063/1.115687
Chakraborty, Arpan, Moe, Craig G., Wu, Yuan, Mates, Tom, Keller, Stacia, Speck, James S., DenBaars, Steven P., Mishra, Umesh K. (2007) Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate. Journal of Applied Physics, 101 (5). 53717pp. doi:10.1063/1.2710303
Pelli, A., Saarinen, K., Tuomisto, F., Ruffenach, S., Briot, O. (2006) Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy. Applied Physics Letters, 89 (1). 11911pp. doi:10.1063/1.2219335
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Sanford, N. A., Robins, L. H., Davydov, A. V., Shapiro, A., Tsvetkov, D. V., Dmitriev, A. V., Keller, S., Mishra, U. K., DenBaars, S. P. (2003) Refractive index study of AlxGa1−xN films grown on sapphire substrates. Journal of Applied Physics, 94 (5). 2980-2991 doi:10.1063/1.1598276
Cho, Yong-Hoon, Song, J. J., Keller, S., Minsky, M. S., Hu, E., Mishra, U. K., DenBaars, S. P. (1998) Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells. Applied Physics Letters, 73 (8). 1128-1130 doi:10.1063/1.122105
Keller, S., Fichtenbaum, N. A., Wu, F., Brown, D., Rosales, A., DenBaars, S. P., Speck, J. S., Mishra, U. K. (2007) Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition. Journal of Applied Physics, 102 (8). 83546pp. doi:10.1063/1.2801406
 
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