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Nakamura, Yoshiaki, Ichikawa, Masakazu, Watanabe, Kentaro, Hatsugai, Yasuhiro (2007) Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer. Applied Physics Letters, 90 (15). 153104pp. doi:10.1063/1.2720756

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Reference TypeJournal (article/letter/editorial)
TitleQuantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer
JournalApplied Physics Letters
AuthorsNakamura, YoshiakiAuthor
Ichikawa, MasakazuAuthor
Watanabe, KentaroAuthor
Hatsugai, YasuhiroAuthor
Year2007 (April 9)Volume90
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2720756Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553339Long-form Identifiermindat:1:5:8553339:6
GUID0
Full ReferenceNakamura, Yoshiaki, Ichikawa, Masakazu, Watanabe, Kentaro, Hatsugai, Yasuhiro (2007) Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer. Applied Physics Letters, 90 (15). 153104pp. doi:10.1063/1.2720756
Plain TextNakamura, Yoshiaki, Ichikawa, Masakazu, Watanabe, Kentaro, Hatsugai, Yasuhiro (2007) Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer. Applied Physics Letters, 90 (15). 153104pp. doi:10.1063/1.2720756
In(2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing

See Also

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Nakamura, Yoshiaki, Watanabe, Kentaro, Fukuzawa, Yo, Ichikawa, Masakazu (2005) Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy. Applied Physics Letters, 87 (13). 133119pp. doi:10.1063/1.2067711
Nakamura, Yoshiaki, Masada, Akiko, Ichikawa, Masakazu (2007) Quantum-confinement effect in individual Ge1−xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy. Applied Physics Letters, 91 (1). 13109pp. doi:10.1063/1.2753737
Naruse, Nobuyasu, Mera, Yutaka, Nakamura, Yoshiaki, Ichikawa, Masakazu, Maeda, Koji (2009) Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots. Applied Physics Letters, 94 (9). 93104pp. doi:10.1063/1.3093806
Nakamura, Yoshiaki, Masada, Akiko, Cho, Sung-Pyo, Tanaka, Nobuo, Ichikawa, Masakazu (2007) Epitaxial growth of ultrahigh density Ge1−xSnx quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO2 films. Journal of Applied Physics, 102 (12). 124302pp. doi:10.1063/1.2822271
Nakamura, Yoshiaki, Suzuki, Ryota, Umeno, Masafumi, Cho, Sung-Pyo, Tanaka, Nobuo, Ichikawa, Masakazu (2006) Observation of the quantum-confinement effect in individual β-FeSi2 nanoislands epitaxially grown on Si (111) surfaces using scanning tunneling spectroscopy. Applied Physics Letters, 89 (12). 123104pp. doi:10.1063/1.2349842
Watanabe, Kentaro, Nakamura, Yoshiaki, Ichikawa, Masakazu (2008) Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy. Applied Surface Science, 254. 7737-7741 doi:10.1016/j.apsusc.2008.02.013
Nakamura, Yoshiaki, Takata, Hiroyuki, Masada, Akiko, Ichikawa, Masakazu (2006) Manipulating Ge quantum dots on ultrathin SixGe1−x oxide films using scanning tunneling microscope tips. Surface Science, 600 (17). 3456-3460 doi:10.1016/j.susc.2006.06.035
Watanabe, Kentaro, Nakamura, Yoshiaki, Kuboya, Shigeyuki, Katayama, Ryuji, Onabe, Kentaro, Ichikawa, Masakazu (2011) Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies. Japanese Journal of Applied Physics, 50 (8) 8 doi:10.1143/jjap.50.08lb18
Watanabe, Kentaro, Nakamura, Yoshiaki, Kuboya, Shigeyuki, Katayama, Ryuji, Onabe, Kentaro, Ichikawa, Masakazu (2011) Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies. Japanese Journal of Applied Physics, 50 (8) 8 doi:10.7567/jjap.50.08lb18
Watanabe, Kentaro, Nakamura, Yoshiaki, Ichikawa, Masakazu (2008) Local Optical Characterization Related to Si Cluster Concentration in GaAs Using Scanning Tunneling Microscope Cathodoluminescence Spectroscopy. Japanese Journal of Applied Physics, 47 (7) 6109-6113 doi:10.1143/jjap.47.6109
Nakamura, Yoshiaki, Sugimoto, Tomohiro, Ichikawa, Masakazu (2009) Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique. Journal of Applied Physics, 105 (1). 14308pp. doi:10.1063/1.3055211
 
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