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Björk, M. T., Hayden, O., Schmid, H., Riel, H., Riess, W. (2007) Vertical surround-gated silicon nanowire impact ionization field-effect transistors. Applied Physics Letters, 90 (14). 142110pp. doi:10.1063/1.2720640

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Reference TypeJournal (article/letter/editorial)
TitleVertical surround-gated silicon nanowire impact ionization field-effect transistors
JournalApplied Physics Letters
AuthorsBjörk, M. T.Author
Hayden, O.Author
Schmid, H.Author
Riel, H.Author
Riess, W.Author
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2720640Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553301Long-form Identifiermindat:1:5:8553301:3
GUID0
Full ReferenceBjörk, M. T., Hayden, O., Schmid, H., Riel, H., Riess, W. (2007) Vertical surround-gated silicon nanowire impact ionization field-effect transistors. Applied Physics Letters, 90 (14). 142110pp. doi:10.1063/1.2720640
Plain TextBjörk, M. T., Hayden, O., Schmid, H., Riel, H., Riess, W. (2007) Vertical surround-gated silicon nanowire impact ionization field-effect transistors. Applied Physics Letters, 90 (14). 142110pp. doi:10.1063/1.2720640
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

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Ghoneim, H., Knoch, J., Riel, H., Webb, D., Björk, M. T., Karg, S., Lörtscher, E., Schmid, H., Riess, W. (2009) Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 95 (21). 213504pp. doi:10.1063/1.3266526
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Björk, Mikael T., Schmid, Heinz, Knoch, Joachim, Riel, Heike, Riess, Walter (2009) Donor deactivation in silicon nanostructures. Nature Nanotechnology, 4 (2). 103-107 doi:10.1038/nnano.2008.400
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Nishiguchi, K., Ono, Y., Fujiwara, A., Yamaguchi, H., Inokawa, H., Takahashi, Y. (2007) Infrared detection with silicon nano-field-effect transistors. Applied Physics Letters, 90 (22). 223108pp. doi:10.1063/1.2744488
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