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Yu, Hongbo, Lee, L. K., Jung, Taeil, Ku, P. C. (2007) Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy. Applied Physics Letters, 90 (14). 141906pp. doi:10.1063/1.2720302

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy
JournalApplied Physics Letters
AuthorsYu, HongboAuthor
Lee, L. K.Author
Jung, TaeilAuthor
Ku, P. C.Author
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2720302Search in ResearchGate
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Mindat Ref. ID8553288Long-form Identifiermindat:1:5:8553288:3
GUID0
Full ReferenceYu, Hongbo, Lee, L. K., Jung, Taeil, Ku, P. C. (2007) Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy. Applied Physics Letters, 90 (14). 141906pp. doi:10.1063/1.2720302
Plain TextYu, Hongbo, Lee, L. K., Jung, Taeil, Ku, P. C. (2007) Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy. Applied Physics Letters, 90 (14). 141906pp. doi:10.1063/1.2720302
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

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Yu, Hongbo, Jung, Taeil, Ku, P. C. (2008) Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template. physica status solidi (c), 5 (6). 1618-1620 doi:10.1002/pssc.200778541
Xin, H. P., Tu, C. W. (2000) Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy. Applied Physics Letters, 77 (14). 2180-2182 doi:10.1063/1.1313813
Aagesen, L.K., Lee, L.K., Ku, P.-C., Thornton, K. (2012) Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy. Journal of Crystal Growth, 361. 57-65 doi:10.1016/j.jcrysgro.2012.08.042
Chang, P. C., Yu, C. L. (2007) InGaN∕GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer. Applied Physics Letters, 91 (14). 141113pp. doi:10.1063/1.2793504
Shen, X. Q., Shimizu, M., Okumura, H., Sasaki, F. (2001) Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 79 (11). 1599-1601 doi:10.1063/1.1402650
Pozina, G., Bergman, J. P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I. (2000) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport. Applied Physics Letters, 77 (11). 1638-1640 doi:10.1063/1.1310175
Feng, W., Kuryatkov, V. V., Chandolu, A., Song, D. Y., Pandikunta, M., Nikishin, S. A., Holtz, M. (2008) Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy. Journal of Applied Physics, 104 (10). 103530pp. doi:10.1063/1.3029695
Mokkapati, S., Tan, H. H., Jagadish, C. (2007) Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy. Applied Physics Letters, 90 (17). 171104pp. doi:10.1063/1.2731729
Damilano, B., Grandjean, N., Massies, J., Siozade, L., Leymarie, J. (2000) InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K. Applied Physics Letters, 77 (9). 1268-1270 doi:10.1063/1.1289915
Shojiki, Kanako, Choi, Jung-Hun, Iwabuchi, Takuya, Usami, Noritaka, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi (2015) Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 106 (22). 222102pp. doi:10.1063/1.4922131
Gelžinytė, K., Ivanov, R., Marcinkevičius, S., Zhao, Y., Becerra, D. L., Nakamura, S., DenBaars, S. P., Speck, J. S. (2015) High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells. Journal of Applied Physics, 117 (2). 23111pp. doi:10.1063/1.4905854
 
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