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Lin, Yu-Syuan, Koa, Shun-Hau, Chan, Chih-Yuan, Hsu, Shawn S. H., Lee, Hong-Mao, Gwo, Shangjr (2007) High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer. Applied Physics Letters, 90 (14). 142111pp. doi:10.1063/1.2719223

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Reference TypeJournal (article/letter/editorial)
TitleHigh current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer
JournalApplied Physics Letters
AuthorsLin, Yu-SyuanAuthor
Koa, Shun-HauAuthor
Chan, Chih-YuanAuthor
Hsu, Shawn S. H.Author
Lee, Hong-MaoAuthor
Gwo, ShangjrAuthor
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2719223Search in ResearchGate
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Mindat Ref. ID8553242Long-form Identifiermindat:1:5:8553242:1
GUID0
Full ReferenceLin, Yu-Syuan, Koa, Shun-Hau, Chan, Chih-Yuan, Hsu, Shawn S. H., Lee, Hong-Mao, Gwo, Shangjr (2007) High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer. Applied Physics Letters, 90 (14). 142111pp. doi:10.1063/1.2719223
Plain TextLin, Yu-Syuan, Koa, Shun-Hau, Chan, Chih-Yuan, Hsu, Shawn S. H., Lee, Hong-Mao, Gwo, Shangjr (2007) High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer. Applied Physics Letters, 90 (14). 142111pp. doi:10.1063/1.2719223
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

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Chan, Chih-Yuan, Lee, Ting-Chi, Hsu, Shawn S. H., Chen, Leaf, Lin, Yu-Syuan (2007) Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors. Japanese Journal of Applied Physics, 46 (2) 478-484 doi:10.1143/jjap.46.478
Lu, Yen-Sheng, Chang, Yuh-Hwa, Hong, Yu-Liang, Lee, Hong-Mao, Gwo, Shangjr, Yeh, J. Andrew (2009) Investigation on −c-InN and a-InN:Mg field effect transistors under electrolyte gate bias. Applied Physics Letters, 95 (10). 102104pp. doi:10.1063/1.3216064
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Wu, Chung-Lin, Lee, Hong-Mao, Kuo, Cheng-Tai, Chen, Chia-Hao, Gwo, Shangjr (2008) Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN∕GaN heterojunction: Measurement of “intrinsic” band lineup. Applied Physics Letters, 92 (16). 162106pp. doi:10.1063/1.2913204
Tsai, Tsong-Ru, Chang, Cheng-Yu, Kuo, Chih-Wei, Hwang, Jih-Shang, Lin, Tai-Yuan, Gwo, Shangjr (2009) Spectral dependence of time-resolved photoreflectance of InN epitaxial films. Applied Physics Letters, 95 (14). 142108pp. doi:10.1063/1.3246156
Su, Yi-En, Wen, Yu-Chieh, Lee, Hong-Mao, Gwo, Shangjr, Sun, Chi-Kuang (2010) Observation of sub-100 femtosecond electron cooling time in InN. Applied Physics Letters, 96 (5). 52108pp. doi:10.1063/1.3302467
Kim, Se Hyun, Yang, Sang Yoon, Shin, Kwonwoo, Jeon, Hayoung, Lee, Jong Won, Hong, Ki Pyo, Park, Chan Eon (2006) Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric. Applied Physics Letters, 89 (18). 183516pp. doi:10.1063/1.2374864
Wu, C.-L., Shen, C.-H., Lin, H.-W., Lee, H.-M., Gwo, S. (2005) Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane. Applied Physics Letters, 87 (24). 241916pp. doi:10.1063/1.2146062
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Zheng, J. F., Tsai, W., Lin, T. D., Lee, Y. J., Chen, C. P., Hong, M., Kwo, J., Cui, S., Ma, T. P. (2007) Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion. Applied Physics Letters, 91 (22). 223502pp. doi:10.1063/1.2817742
 
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