Sun, Qing-Qing, Chen, Wei, Ding, Shi-Jin, Xu, Min, Lu, Hong-Liang, Lindh-Rengifo, Hans-Cristian, Zhang, David Wei, Wang, Li-Kang (2007) Comparative study of passivation mechanism of oxygen vacancy with fluorine in HfO2 and HfSiO4. Applied Physics Letters, 90 (14). 142904pp. doi:10.1063/1.2719177

See Also

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	Sun, Qing-Qing, Chen, Wei, Ding, Shi-Jin, Xu, Min, Zhang, David Wei, Wang, Li-Kang (2007) Effects of chlorine residue in atomic layer deposition hafnium oxide: A density-functional-theory study. Applied Physics Letters, 91 (2). 22901pp. doi:10.1063/1.2756108
	Xu, Min, Zhang, Chi, Ding, Shi-Jin, Lu, Hong-Liang, Chen, Wei, Sun, Qing-Qing, Zhang, David Wei, Wang, Li-Kang (2006) Mechanism of interfacial layer suppression after performing surface Al(CH3)3 pretreatment during atomic layer deposition of Al2O3. Journal of Applied Physics, 100 (10). 106101pp. doi:10.1063/1.2388044
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	Lu, Hong-Liang, Sun, Liang, Ding, Shi-Jin, Xu, Min, Zhang, David Wei, Wang, Li-Kang (2006) Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment. Applied Physics Letters, 89 (15). 152910pp. doi:10.1063/1.2363145
	He, Jing-Lan, Sun, Qing-Qing, Lu, Hong-Liang, Wang, Peng-Fei, Ding, Shi-Jin, Wei Zhang, David (2013) Distortion of electronic structure in HfO2 induced by the out-diffused As from GaAs substrate. Journal of Applied Physics, 113 (18). 186101pp. doi:10.1063/1.4804059
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