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Clémer, K., Stesmans, A., Afanas’ev, V. V. (2007) Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance. Applied Physics Letters, 90 (14). 142116pp. doi:10.1063/1.2435337

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Reference TypeJournal (article/letter/editorial)
TitleObservation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance
JournalApplied Physics Letters
AuthorsClémer, K.Author
Stesmans, A.Author
Afanas’ev, V. V.Author
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2435337Search in ResearchGate
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Mindat Ref. ID8553191Long-form Identifiermindat:1:5:8553191:8
GUID0
Full ReferenceClémer, K., Stesmans, A., Afanas’ev, V. V. (2007) Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance. Applied Physics Letters, 90 (14). 142116pp. doi:10.1063/1.2435337
Plain TextClémer, K., Stesmans, A., Afanas’ev, V. V. (2007) Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance. Applied Physics Letters, 90 (14). 142116pp. doi:10.1063/1.2435337
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

See Also

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Stesmans, A., Clémer, K., Afanas’ev, V. V. (2008) P-associated defects in the high-κinsulatorsHfO2andZrO2revealed by electron spin resonance. Physical Review B, 77 (12) doi:10.1103/physrevb.77.125341
Stesmans, A., Afanas’ev, V. V., Chen, F., Campbell, S. A. (2004) Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance. Applied Physics Letters, 84 (22). 4574-4576 doi:10.1063/1.1695435
Stesmans, A., Clémer, K., Afanas’ev, V. V., Edge, L. F., Schlom, D. G. (2006) Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects. Applied Physics Letters, 89 (11). 112121pp. doi:10.1063/1.2219334
Stesmans, A., Afanas’ev, V. V. (1998) Electron spin resonance features of interface defects in thermal (100)Si/SiO2. Journal of Applied Physics, 83 (5). 2449-2457 doi:10.1063/1.367005
Somers, P., Stesmans, A., Souriau, L., Afanas’ev, V. V. (2012) Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures. Journal of Applied Physics, 112 (7). 74501pp. doi:10.1063/1.4748313
Stesmans, A., Somers, P., Afanas’ev, V. V., Claeys, C., Simoen, E. (2006) Inherent density of point defects in thermal tensile strained (100)Si∕SiO2 entities probed by electron spin resonance. Applied Physics Letters, 89 (15). 152103pp. doi:10.1063/1.2339033
Stesmans, A., Afanas’ev, V. V. (1998) Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance. Applied Physics Letters, 72 (18). 2271-2273 doi:10.1063/1.121335
Stesmans, A, Somers, P, Afanas’ev, V V (2009) Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures. Journal of Physics: Condensed Matter, 21 (12). 122201pp. doi:10.1088/0953-8984/21/12/122201
Clémer, K., Stesmans, A., Afanas’ev, V. V., Edge, L. F., Schlom, D. G. (2007) Paramagnetic point defects in (100)Si∕LaAlO3 structures: Nature and stability of the interface. Journal of Applied Physics, 102 (3). 34516pp. doi:10.1063/1.2749423
Stesmans, A., Afanas’ev, V. V. (2003) Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2. Applied Physics Letters, 82 (23). 4074-4076 doi:10.1063/1.1579564
Stesmans, A., Clémer, K., Afanas’ev, V. V. (2005) Electron spin resonance probing of fundamental point defects in nanometer-sized silica particles. Physical Review B, 72 (15) doi:10.1103/physrevb.72.155335
 
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