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Jur, J. S., Lichtenwalner, D. J., Kingon, A. I. (2007) High temperature stability of lanthanum silicate dielectric on Si (001). Applied Physics Letters, 90 (10). 102908pp. doi:10.1063/1.2712805

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Reference TypeJournal (article/letter/editorial)
TitleHigh temperature stability of lanthanum silicate dielectric on Si (001)
JournalApplied Physics Letters
AuthorsJur, J. S.Author
Lichtenwalner, D. J.Author
Kingon, A. I.Author
Year2007 (March 5)Volume90
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2712805Search in ResearchGate
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Mindat Ref. ID8552806Long-form Identifiermindat:1:5:8552806:6
GUID0
Full ReferenceJur, J. S., Lichtenwalner, D. J., Kingon, A. I. (2007) High temperature stability of lanthanum silicate dielectric on Si (001). Applied Physics Letters, 90 (10). 102908pp. doi:10.1063/1.2712805
Plain TextJur, J. S., Lichtenwalner, D. J., Kingon, A. I. (2007) High temperature stability of lanthanum silicate dielectric on Si (001). Applied Physics Letters, 90 (10). 102908pp. doi:10.1063/1.2712805
In(2007, March) Applied Physics Letters Vol. 90 (10) AIP Publishing

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Lichtenwalner, Daniel J., Jur, Jesse S., Jha, Rashmi, Inoue, Naoya, Chen, Bei, Misra, Veena, Kingon, Angus I. (2006) High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes. Journal of the Electrochemical Society, 153. doi:10.1149/1.2218757
Lichtenwalner, Daniel J., Jur, Jesse S., Kingon, Angus I., Agustin, Melody P., Yang, Yan, Stemmer, Susanne, Goncharova, Lyudmila V., Gustafsson, Torgny, Garfunkel, Eric (2005) Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction. Journal of Applied Physics, 98 (2). 24314pp. doi:10.1063/1.1988967
LeBeau, James M., Jur, Jesse S., Lichtenwalner, Daniel J., Craft, H. Spalding, Maria, Jon-Paul, Kingon, Angus I., Klenov, Dmitri O., Cagnon, Joël, Stemmer, Susanne (2008) High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control. Applied Physics Letters, 92 (11). 112912pp. doi:10.1063/1.2901036
Alshareef, H. N., Quevedo-Lopez, M., Wen, H. C., Harris, R., Kirsch, P., Majhi, P., Lee, B. H., Jammy, R., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I. (2006) Work function engineering using lanthanum oxide interfacial layers. Applied Physics Letters, 89 (23). 232103pp. doi:10.1063/1.2396918
Inoue, Naoya, Lichtenwalner, Daniel J., Jur, Jesse S., Kingon, Angus I. (2007) Analysis of Interface States in LaSixOyMetal–Insulator–Semiconductor Structures. Japanese Journal of Applied Physics, 46 (10) 6480-6488 doi:10.1143/jjap.46.6480
Stemmer, S., Maria, J.-P., Kingon, A. I. (2001) Structure and stability of La2O3/SiO2 layers on Si(001). Applied Physics Letters, 79 (1). 102-104 doi:10.1063/1.1383268
Maria, J.-P., Wicaksana, D., Kingon, A. I., Busch, B., Schulte, H., Garfunkel, E., Gustafsson, T. (2001) High temperature stability in lanthanum and zirconia-based gate dielectrics. Journal of Applied Physics, 90 (7). 3476-3482 doi:10.1063/1.1391418
Libralesso, L., Lee, T.-L., Zegenhagen, J. (2007) Pr2O3 on Si(001): A commensurate interfacial layer overgrown by silicate. Applied Physics Letters, 90 (22). 222905pp. doi:10.1063/1.2743945
Dat, R., Lichtenwalner, D. J., Auciello, O., Kingon, A. I. (1994) Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3ferroelectric capacitors on platinized silicon with no polarization fatigue. Applied Physics Letters, 64 (20). 2673-2675 doi:10.1063/1.111488
Zhang, D., Kolbas, R. M., Milewski, P. D., Lichtenwalner, D. J., Kingon, A. I., Zavada, J. M. (1994) Light emission from thermally oxidized silicon nanoparticles. Applied Physics Letters, 65 (21). 2684-2686 doi:10.1063/1.112602
Yang, Z., Hoffmann, S., Lichtenwalner, D. J., Krim, J., Kingon, A. I. (2011) Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications. Applied Physics Letters, 98 (4). 44102pp. doi:10.1063/1.3545846
 
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