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Bai, J., Park, J.-S., Cheng, Z., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A., Dudley, M. (2007) Study of the defect elimination mechanisms in aspect ratio trapping Ge growth. Applied Physics Letters, 90 (10). 101902pp. doi:10.1063/1.2711276

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Reference TypeJournal (article/letter/editorial)
TitleStudy of the defect elimination mechanisms in aspect ratio trapping Ge growth
JournalApplied Physics Letters
AuthorsBai, J.Author
Park, J.-S.Author
Cheng, Z.Author
Curtin, M.Author
Adekore, B.Author
Carroll, M.Author
Lochtefeld, A.Author
Dudley, M.Author
Year2007 (March 5)Volume90
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2711276Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8552720Long-form Identifiermindat:1:5:8552720:7
GUID0
Full ReferenceBai, J., Park, J.-S., Cheng, Z., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A., Dudley, M. (2007) Study of the defect elimination mechanisms in aspect ratio trapping Ge growth. Applied Physics Letters, 90 (10). 101902pp. doi:10.1063/1.2711276
Plain TextBai, J., Park, J.-S., Cheng, Z., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A., Dudley, M. (2007) Study of the defect elimination mechanisms in aspect ratio trapping Ge growth. Applied Physics Letters, 90 (10). 101902pp. doi:10.1063/1.2711276
In(2007, March) Applied Physics Letters Vol. 90 (10) AIP Publishing

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Park, J.-S., Bai, J., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A. (2007) Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping. Applied Physics Letters, 90 (5). 52113pp. doi:10.1063/1.2435603
Li, J. Z., Bai, J., Park, J.-S., Adekore, B., Fox, K., Carroll, M., Lochtefeld, A., Shellenbarger, Z. (2007) Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping. Applied Physics Letters, 91 (2). 21114pp. doi:10.1063/1.2756165
Li, J. Z., Bai, J., Major, C., Carroll, M., Lochtefeld, A., Shellenbarger, Z. (2008) Defect reduction of GaAs/Si epitaxy by aspect ratio trapping. Journal of Applied Physics, 103 (10). 106102pp. doi:10.1063/1.2924410
Park, J.-S., Curtin, M., Hydrick, J. M., Bai, J., Carroll, M., Fiorenza, J. G., Lochtefeld, A. (2009) Fabrication of Low-Defectivity, Compressively Strained Ge on Si[sub 0.2]Ge[sub 0.8] Structures Using Aspect Ratio Trapping. Journal of the Electrochemical Society, 156. doi:10.1149/1.3076192
Li, J. Z., Hydrick, J. M., Park, J. S., Li, J., Bai, J., Cheng, Z. Y., Carroll, M., Fiorenza, J. G., Lochtefeld, A., Chan, W., Shellenbarger, Z. (2009) Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping. Journal of the Electrochemical Society, 156. doi:10.1149/1.3129463
Wu, Y. Q., Xu, M., Ye, P. D., Cheng, Z., Li, J., Park, J.-S., Hydrick, J., Bai, J., Carroll, M., Fiorenza, J. G., Lochtefeld, A. (2008) Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique. Applied Physics Letters, 93 (24). 242106pp. doi:10.1063/1.3050466
Park, J.-S., Curtin, M., Bai, J., Bengtson, S., Carroll, M., Lochtefeld, A. (2007) Thin strained layers inserted in compositionally graded SiGe buffers and their effects on strain relaxation and dislocation. Journal of Applied Physics, 101 (5). 53501pp. doi:10.1063/1.2710356
Li, J.Z., Bai, J., Hydrick, J.M., Park, J.S., Major, C., Carroll, M., Fiorenza, J.G., Lochtefeld, A. (2009) Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping. Journal of Crystal Growth, 311 (11). 3133-3137 doi:10.1016/j.jcrysgro.2009.03.018
Park, Ji-Soo, Curtin, Michael, Bai, Jie, Carroll, Mark, Lochtefeld, Anthony (2006) Growth of Ge Thick Layers on Si(001) Substrates Using Reduced Pressure Chemical Vapor Deposition. Japanese Journal of Applied Physics, 45 (11) 8581-8585 doi:10.1143/jjap.45.8581
Park, Hyun D., Prokes, S. M. (2007) Study of the initial nucleation and growth of catalyst-free InAs and Ge nanowires. Applied Physics Letters, 90 (20). 203104pp. doi:10.1063/1.2740105
Zaumseil, P., Schroeder, T., Park, Ji-Soo, Fiorenza, J. G., Lochtefeld, A. (2009) A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques. Journal of Applied Physics, 106 (9). 93524pp. doi:10.1063/1.3257265
 
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