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Chen, A., Woodall, J. M. (2007) Field-effect transistors on molecular beam epitaxy GaP. Applied Physics Letters, 90 (10). 103509pp. doi:10.1063/1.2710476

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Reference TypeJournal (article/letter/editorial)
TitleField-effect transistors on molecular beam epitaxy GaP
JournalApplied Physics Letters
AuthorsChen, A.Author
Woodall, J. M.Author
Year2007 (March 5)Volume90
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2710476Search in ResearchGate
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Mindat Ref. ID8552705Long-form Identifiermindat:1:5:8552705:8
GUID0
Full ReferenceChen, A., Woodall, J. M. (2007) Field-effect transistors on molecular beam epitaxy GaP. Applied Physics Letters, 90 (10). 103509pp. doi:10.1063/1.2710476
Plain TextChen, A., Woodall, J. M. (2007) Field-effect transistors on molecular beam epitaxy GaP. Applied Physics Letters, 90 (10). 103509pp. doi:10.1063/1.2710476
In(2007, March) Applied Physics Letters Vol. 90 (10) AIP Publishing

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Chen, A., Yulius, A., Woodall, J. M., Broadbridge, C. C. (2004) A hybrid epitaxy method for InAs on GaP. Applied Physics Letters, 85 (16). 3447-3449 doi:10.1063/1.1808241
Omori, M., Drummond, T. J., Morkoç, H. (1981) Low‐noise GaAs field‐effect transistors prepared by molecular beam epitaxy. Applied Physics Letters, 39 (7). 566-569 doi:10.1063/1.92796
Metze, G. M., Choi, H. K., Tsaur, B‐Y. (1984) Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy. Applied Physics Letters, 45 (10). 1107-1109 doi:10.1063/1.95033
Austing, D. G., Lefebvre, J., Bond, J., Finnie, P. (2007) Carbon contacted nanotube field effect transistors. Applied Physics Letters, 90 (10). 103112pp. doi:10.1063/1.2711178
Kuang, J. B., Chen, Y. K., Sivco, D., Cho, A. Y., Eastman, L. F. (1990) High‐current lattice‐strained In0.59Ga0.41As/In0.52Al0.48As modulation‐doped field‐effect transistors grown by molecular beam epitaxy. Applied Physics Letters, 57 (17). 1784-1786 doi:10.1063/1.104041
Saunier, P., Shih, H. D. (1983) High‐performanceK‐band GaAs power field‐effect transistors prepared by molecular beam epitaxy. Applied Physics Letters, 42 (11). 966-968 doi:10.1063/1.93816
Kim, D. Y., Steckl, A. J. (2007) Liquid-state field-effect transistors using electrowetting. Applied Physics Letters, 90 (4). 43507pp. doi:10.1063/1.2435508
Xia, Yu, Kalihari, Vivek, Frisbie, C. Daniel, Oh, Nam K., Rogers, John A. (2007) Tetracene air-gap single-crystal field-effect transistors. Applied Physics Letters, 90 (16). 162106pp. doi:10.1063/1.2724895
Smith, T. P., Phillips, Julia M., Augustyniak, W. M., Stiles, P. J. (1984) Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si. Applied Physics Letters, 45 (8). 907-909 doi:10.1063/1.95410
Sakowicz, M., Łusakowski, J., Karpierz, K., Grynberg, M., Majkusiak, B. (2007) Transport and quantum scattering time in field-effect transistors. Applied Physics Letters, 90 (17). 172104pp. doi:10.1063/1.2731713
Kuang, J. B., Tasker, P. J., Chen, Y. K., Wang, G. W., Eastman, L. F., Aina, O. A., Hier, H., Fathimulla, A. (1989) Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1136-1138 doi:10.1063/1.100740
 
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