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Jang, Ho Won, Son, Jun Ho, Lee, Jong-Lam (2007) Highly reflective low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer. Applied Physics Letters, 90 (1). 12106pp. doi:10.1063/1.2430405

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Reference TypeJournal (article/letter/editorial)
TitleHighly reflective low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer
JournalApplied Physics Letters
AuthorsJang, Ho WonAuthor
Son, Jun HoAuthor
Lee, Jong-LamAuthor
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2430405Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8552659Long-form Identifiermindat:1:5:8552659:0
GUID0
Full ReferenceJang, Ho Won, Son, Jun Ho, Lee, Jong-Lam (2007) Highly reflective low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer. Applied Physics Letters, 90 (1). 12106pp. doi:10.1063/1.2430405
Plain TextJang, Ho Won, Son, Jun Ho, Lee, Jong-Lam (2007) Highly reflective low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer. Applied Physics Letters, 90 (1). 12106pp. doi:10.1063/1.2430405
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

See Also

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Ho Son, Jun, Won Jang, Ho, Lee, Jong-Lam (2007) Erratum: “Low-resistance and high-reflectance Ni∕Ag∕Ru∕Ni∕Au ohmic contact on p-type GaN” [Appl. Phys. Lett. 85, 4421 (2004)]. Applied Physics Letters, 90 (10). 109903pp. doi:10.1063/1.2712499
Jang, Ho Won, Son, Jun Ho, Lee, Jong-Lam (2008) Formation of High-Quality Ag-Based Ohmic Contacts to p-Type GaN. Journal of the Electrochemical Society, 155. doi:10.1149/1.2940324
Jang, Ho Won, Lee, Jong-Lam (2004) Mechanism for ohmic contact formation of Ni∕Ag contacts on p-type GaN. Applied Physics Letters, 85 (24). 5920-5922 doi:10.1063/1.1835535
Jang, Ho Won, Lee, Jong-Lam (2004) Low-resistance and high-reflectance Ni∕Ag∕Ru∕Ni∕Au ohmic contact on p-type GaN. Applied Physics Letters, 85 (19). 4421pp. doi:10.1063/1.1819981
Jang, Ho Won, Kim, Ki Hong, Kim, Jong Kyu, Hwang, Soon-Won, Yang, Jung Ja, Lee, Kang Jae, Son, Sung-Jin, Lee, Jong-Lam (2001) Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization. Applied Physics Letters, 79 (12). 1822-1824 doi:10.1063/1.1403660
Jang, Ho Won, Lee, Jong-Lam (2009) Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN. Applied Physics Letters, 94 (18). 182108pp. doi:10.1063/1.3133873
Kim, Soo Young, Jang, Ho Won, Lee, Jong-Lam (2003) Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN. Applied Physics Letters, 82 (1). 61-63 doi:10.1063/1.1534630
Son, Jun Ho, Jung, Gwan Ho, Lee, Jong-Lam (2008) Enhancement of light reflectance and thermal stability in Ag–Cu alloy contacts on p-type GaN. Applied Physics Letters, 93 (1). 12102pp. doi:10.1063/1.2956417
Son, Jun Ho, Song, Yang Hee, Yu, Hak Ki, Lee, Jong-Lam (2009) Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN. Applied Physics Letters, 95 (6). 62108pp. doi:10.1063/1.3206742
Jang, Ho Won, Lee, Jong-Lam (2003) Transparent Ohmic contacts of oxidized Ru and Ir onp-type GaN. Journal of Applied Physics, 93 (9). 5416-5421 doi:10.1063/1.1565494
Young Moon, Seon, Ho Son, Jun, Jin Choi, Kyung, Lee, Jong-Lam, Jang, Ho Won (2011) Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes. Applied Physics Letters, 99 (20). 202106pp. doi:10.1063/1.3662421
 
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