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Cheong, Kuan Yew, Bahng, Wook, Kim, Nam-Kyun (2007) Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics. Applied Physics Letters, 90 (1). 12120pp. doi:10.1063/1.2430308

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Reference TypeJournal (article/letter/editorial)
TitleEffects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics
JournalApplied Physics Letters
AuthorsCheong, Kuan YewAuthor
Bahng, WookAuthor
Kim, Nam-KyunAuthor
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2430308Search in ResearchGate
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Mindat Ref. ID8552653Long-form Identifiermindat:1:5:8552653:6
GUID0
Full ReferenceCheong, Kuan Yew, Bahng, Wook, Kim, Nam-Kyun (2007) Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics. Applied Physics Letters, 90 (1). 12120pp. doi:10.1063/1.2430308
Plain TextCheong, Kuan Yew, Bahng, Wook, Kim, Nam-Kyun (2007) Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics. Applied Physics Letters, 90 (1). 12120pp. doi:10.1063/1.2430308
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

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Cheong, Kuan Yew, Bahng, Wook, Kim, Nam-Kyun (2005) Current conduction mechanisms in post-nitridation rapid-thermal-annealed gate oxides on 4H silicon carbide. Applied Physics Letters, 87 (21). 212102pp. doi:10.1063/1.2130522
Cheong, Kuan Yew, Moon, Jeong Hyun, Kim, Hyeong Joon, Bahng, Wook, Kim, Nam-Kyun (2007) Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide. Applied Physics Letters, 90 (16). 162113pp. doi:10.1063/1.2730731
Cheong, Kuan Yew, Moon, Jeong Hyun, Kim, Hyeong Joon, Bahng, Wook, Kim, Nam-Kyun (2008) Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide. Journal of Applied Physics, 103 (8). 84113pp. doi:10.1063/1.2908870
Cheong, Kuan Yew, Bahng, Wook, Kim, Nam-Kyun (2008) Analysis of charge conduction mechanisms in nitrided SiO2 Film on 4H SiC. Physics Letters A, 372. 529-532 doi:10.1016/j.physleta.2007.07.054
Moon, Jeong Hyun, Yim, Jeong Hyuk, Seo, Han Seok, Lee, Do Hyun, Kim, Chang Hyun, Kim, Hyeong Joon, Cheong, Kuan Yew, Bahng, Wook, Kim, Nam-Kyun (2010) Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC. Applied Physics Letters, 96 (12). 122108pp. doi:10.1063/1.3367891
Cheong, K.Y., Bahng, Wook, Kim, Nam Kyun (2005) Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC. Materials Science Forum, 483. 689-692 doi:10.4028/www.scientific.net/msf.483-485.689
Moon, Jeong Hyun, Yim, Jeong Hyuk, Seo, Han Seok, Kim, Chang Hyun, Lee, Do Hyun, Cheong, Kuan Yew, Bahng, Wook, Kim, Nam Kyun, Kim, Hyeong Joon (2010) Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide. Materials Science Forum, 645. 511-514 doi:10.4028/www.scientific.net/msf.645-648.511
Moon, Jeong Hyun, Cheong, Kuan Yew, Eom, Da Il, Song, Ho Keun, Yim, Jeong Hyuk, Lee, Jong Ho, Na, Hoon Joo, Bahng, Wook, Kim, Nam Kyun, Kim, Hyeong Joon (2007) Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001). Materials Science Forum, 556. 643-646 doi:10.4028/www.scientific.net/msf.556-557.643
Kammutty Musliyarakath, Abdul Shekkeer, Cheong, Kuan Yew, Quah, Hock Jin (2024) Growth of gallium cerium oxide passivation layer on 4H-Silicon carbide substrate and its metal-oxide-semiconductor characteristics. Ceramics International, 50 (1) 1298-1302 doi:10.1016/j.ceramint.2023.10.148
Poobalan, Banu, Moon, Jeong Hyun, Kim, Sang-Cheol, Joo, Sung-Jae, Bahng, Wook, Kang, In Ho, Kim, Nam-Kyun, Cheong, Kuan Yew (2013) Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature. Applied Surface Science, 285. 795-804 doi:10.1016/j.apsusc.2013.08.131
Wong, Yew Hoong, Cheong, Kuan Yew (2012) Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate. Journal of the Electrochemical Society, 159. doi:10.1149/2.081203jes
 
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