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Wang, Zhengliang, Liang, Hongbin, Wang, Jing, Gong, Menglian, Su, Qiang (2006) Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors. Applied Physics Letters, 89 (7). 71921pp. doi:10.1063/1.2335579

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Reference TypeJournal (article/letter/editorial)
TitleRed-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors
JournalApplied Physics Letters
AuthorsWang, ZhengliangAuthor
Liang, HongbinAuthor
Wang, JingAuthor
Gong, MenglianAuthor
Su, QiangAuthor
Year2006 (August 14)Volume89
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2335579Search in ResearchGate
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Mindat Ref. ID8552227Long-form Identifiermindat:1:5:8552227:5
GUID0
Full ReferenceWang, Zhengliang, Liang, Hongbin, Wang, Jing, Gong, Menglian, Su, Qiang (2006) Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors. Applied Physics Letters, 89 (7). 71921pp. doi:10.1063/1.2335579
Plain TextWang, Zhengliang, Liang, Hongbin, Wang, Jing, Gong, Menglian, Su, Qiang (2006) Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors. Applied Physics Letters, 89 (7). 71921pp. doi:10.1063/1.2335579
In(2006, August) Applied Physics Letters Vol. 89 (7) AIP Publishing

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