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Kim, T. K., Yang, S. S., Son, J. K., Hong, Y. G., Yang, G. M. (2006) GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate. Applied Physics Letters, 89 (4). 41129pp. doi:10.1063/1.2236223

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Reference TypeJournal (article/letter/editorial)
TitleGaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate
JournalApplied Physics Letters
AuthorsKim, T. K.Author
Yang, S. S.Author
Son, J. K.Author
Hong, Y. G.Author
Yang, G. M.Author
Year2006 (July 24)Volume89
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.2236223Search in ResearchGate
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Mindat Ref. ID8551892Long-form Identifiermindat:1:5:8551892:6
GUID0
Full ReferenceKim, T. K., Yang, S. S., Son, J. K., Hong, Y. G., Yang, G. M. (2006) GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate. Applied Physics Letters, 89 (4). 41129pp. doi:10.1063/1.2236223
Plain TextKim, T. K., Yang, S. S., Son, J. K., Hong, Y. G., Yang, G. M. (2006) GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate. Applied Physics Letters, 89 (4). 41129pp. doi:10.1063/1.2236223
In(2006, July) Applied Physics Letters Vol. 89 (4) AIP Publishing

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Kim, T. K., Yang, S. S., Son, J. K., Hong, Y. G., Yang, G. M. (2007) Growth of a GaN Epilayer on a Si (111) Substrate by Using an AlN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector. Journal of the Korean Physical Society, 50 (3). 801pp. doi:10.3938/jkps.50.801
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