Ohata, Akiko, Cristoloveanu, Sorin, Cassé, Mikael (2006) Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method. Applied Physics Letters, 89 (3). 32104pp. doi:10.1063/1.2222255

See Also

These are possibly similar items as determined by title/reference text matching only.

	Ohata, Akiko, Gallon, Claire, Fenouillet-Beranger, Claire, Cristoloveanu, Sorin (2008) Investigation of Mobility Enhancement Effect in Process-Induced Strained Ultrathin Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47 (4) 2124-2126 doi:10.1143/jjap.47.2124
	Ohata, A., Rodriguez, N., Navarro, C., Donetti, L., Gamiz, F., Fenouillet-Beranger, F. C., Cristoloveanu, S. (2013) Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. Journal of Applied Physics, 113 (14). 144514pp. doi:10.1063/1.4799612
	Rodriguez, N., Cristoloveanu, S., Gámiz, F. (2007) Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 102 (8). 83712pp. doi:10.1063/1.2800194
	Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Simoen, E., Claeys, C. (2005) Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate. Journal of Applied Physics, 98 (11). 114506pp. doi:10.1063/1.2138380
	Kobayashi, Shigeki, Saitoh, Masumi, Uchida, Ken (2009) Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 106 (2). 24511pp. doi:10.1063/1.3182792
	Chen, Jiezhi, Saraya, Takura, Miyaji, Kousuke, Shimizu, Ken, Hiramoto, Toshiro (2009) Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method. Japanese Journal of Applied Physics, 48 (1) 11205 doi:10.1143/jjap.48.011205
	Mercha, A., Simoen, E., van Meer, H., Claeys, C. (2003) Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 82 (11). 1790-1792 doi:10.1063/1.1561575
	Wunnicke, Olaf (2006) Gate capacitance of back-gated nanowire field-effect transistors. Applied Physics Letters, 89 (8). 83102pp. doi:10.1063/1.2337853
	Uchida, Ken, Koga, Junji, Takagi, Shin-ichi (2007) Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 102 (7). 74510pp. doi:10.1063/1.2785957
	von Haartman, Martin, Östling, Mikael (2007) Effect of channel positioning on the 1∕f noise in silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 101 (3). 34506pp. doi:10.1063/1.2433772
	Polishchuk, Igor, Hu, Chenming (2000) Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 76 (14). 1938-1940 doi:10.1063/1.126218