Seguin, R., Schliwa, A., Germann, T. D., Rodt, S., Pötschke, K., Strittmatter, A., Pohl, U. W., Bimberg, D., Winkelnkemper, M., Hammerschmidt, T., Kratzer, P. (2006) Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕GaAs quantum dots. Applied Physics Letters, 89 (26). 263109pp. doi:10.1063/1.2424446

See Also

These are possibly similar items as determined by title/reference text matching only.

	Rodt, S., Seguin, R., Schliwa, A., Guffarth, F., Pötschke, K., Pohl, U.W., Bimberg, D. (2007) Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots. Journal of Luminescence, 122. 735-739 doi:10.1016/j.jlumin.2006.01.274
	Seguin, R., Schliwa, A., Rodt, S., Pötschke, K., Pohl, U. W., Bimberg, D. (2005) Size-Dependent Fine-Structure Splitting in Self-OrganizedInAs/GaAsQuantum Dots. Physical Review Letters, 95 (25). doi:10.1103/physrevlett.95.257402
	Seguin, R., Rodt, S., Schliwa, A., Pötschke, K., Pohl, U. W., Bimberg, D. (2006) Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots. physica status solidi (b), 243 (15). 3937-3941 doi:10.1002/pssb.200671519
	Winkelnkemper, M., Seguin, R., Rodt, S., Schliwa, A., Reißmann, L., Strittmatter, A., Hoffmann, A., Bimberg, D. (2007) Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots. Journal of Applied Physics, 101 (11). 113708pp. doi:10.1063/1.2743893
	Germann, T. D., Strittmatter, A., Pohl, J., Pohl, U. W., Bimberg, D., Rautiainen, J., Guina, M., Okhotnikov, O. G. (2008) High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots. Applied Physics Letters, 92 (10). 101123pp. doi:10.1063/1.2898165
	Siebert, E., Warming, T., Schliwa, A., Stock, E., Winkelnkemper, M., Rodt, S., Bimberg, D. (2009) Spectroscopic access to single-hole energies in InAs/GaAs quantum dots. Physical Review B, 79 (20) doi:10.1103/physrevb.79.205321
	Strittmatter, A., Schliwa, A., Schulze, J.-H., Germann, T. D., Dreismann, A., Hitzemann, O., Stock, E., Ostapenko, I. A., Rodt, S., Unrau, W., Pohl, U. W., Hoffmann, A., Bimberg, D., Haisler, V. (2012) Lateral positioning of InGaAs quantum dots using a buried stressor. Applied Physics Letters, 100 (9). 93111pp. doi:10.1063/1.3691251
	Feucker, M., Seguin, R., Rodt, S., Hoffmann, A., Bimberg, D. (2008) Decay dynamics of neutral and charged excitonic complexes in single InAs∕GaAs quantum dots. Applied Physics Letters, 92 (6). 63116pp. doi:10.1063/1.2844886
	Stracke, G., Glacki, A., Nowozin, T., Bonato, L., Rodt, S., Prohl, C., Lenz, A., Eisele, H., Schliwa, A., Strittmatter, A., Pohl, U. W., Bimberg, D. (2012) Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer. Applied Physics Letters, 101 (22). 223110pp. doi:10.1063/1.4768294
	Seguin, R., Rodt, S., Strittmatter, A., Reißmann, L., Bartel, T., Hoffmann, A., Bimberg, D., Hahn, E., Gerthsen, D. (2004) Multi-excitonic complexes in single InGaN quantum dots. Applied Physics Letters, 84 (20). 4023-4025 doi:10.1063/1.1751214
	Niermann, T., Kießling, F., Lehmann, M., Schulze, J.-H., Germann, T. D., Pötschke, K., Strittmatter, A., Pohl, U. W. (2012) Atomic structure of closely stacked InAs submonolayer depositions in GaAs. Journal of Applied Physics, 112 (8). 83505pp. doi:10.1063/1.4758301