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Krishnan, Bharat, Das, Hrishikesh, Lin, Huang-De, Koshka, Yaroslav (2006) Selective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor. Applied Physics Letters, 89 (26). 262103pp. doi:10.1063/1.2423323

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Reference TypeJournal (article/letter/editorial)
TitleSelective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor
JournalApplied Physics Letters
AuthorsKrishnan, BharatAuthor
Das, HrishikeshAuthor
Lin, Huang-DeAuthor
Koshka, YaroslavAuthor
Year2006 (December 25)Volume89
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.2423323Search in ResearchGate
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Mindat Ref. ID8551595Long-form Identifiermindat:1:5:8551595:6
GUID0
Full ReferenceKrishnan, Bharat, Das, Hrishikesh, Lin, Huang-De, Koshka, Yaroslav (2006) Selective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor. Applied Physics Letters, 89 (26). 262103pp. doi:10.1063/1.2423323
Plain TextKrishnan, Bharat, Das, Hrishikesh, Lin, Huang-De, Koshka, Yaroslav (2006) Selective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor. Applied Physics Letters, 89 (26). 262103pp. doi:10.1063/1.2423323
In(2006, December) Applied Physics Letters Vol. 89 (26) AIP Publishing

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Krishnan, Bharat, Das, Hrishikesh, Lin, Huang De, Koshka, Yaroslav (2007) Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method. Materials Science Forum, 556. 149-152 doi:10.4028/www.scientific.net/msf.556-557.149
Das, Hrishikesh, Krishnan, Bharat, Melnychuk, Galyna, Koshka, Yaroslav (2008) Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method. Materials Science Forum, 600. 163-166 doi:10.4028/www.scientific.net/msf.600-603.163
Koshka, Yaroslav, Lin, Huang-De, Melnychuk, Galyna, Wood, Colin (2006) Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation. Journal of Crystal Growth, 294 (2). 260-267 doi:10.1016/j.jcrysgro.2006.06.024
Kotamraju, Siva Prasad, Krishnan, Bharat, Melnychuk, Galyna, Koshka, Yaroslav (2010) Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC. Materials Science Forum, 645. 111-114 doi:10.4028/www.scientific.net/msf.645-648.111
Krishnan, Bharat, Merrett, Joseph Neil, Melnychuk, Galyna, Koshka, Yaroslav (2010) 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method. Materials Science Forum, 645. 925-928 doi:10.4028/www.scientific.net/msf.645-648.925
Koshka, Yaroslav, Lin, Huang De, Melnychuk, Galyna, Wood, Colin (2006) Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor. Materials Science Forum, 527. 167-170 doi:10.4028/www.scientific.net/msf.527-529.167
Das, Hrishikesh, Melnychuk, Galyna, Koshka, Yaroslav (2010) Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC. Journal of Crystal Growth, 312 (12). 1912-1919 doi:10.1016/j.jcrysgro.2010.03.022
Das, Hrishikesh, Melnychuk, Galyna, Koshka, Yaroslav (2009) Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth. Materials Science Forum, 615. 121-124 doi:10.4028/www.scientific.net/msf.615-617.121
Krishnan, Bharat, Kotamraju, Siva, Thirumalai, Rooban Venkatesh K.G., Koshka, Yaroslav (2011) Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC. Journal of Crystal Growth, 321 (1). 8-14 doi:10.1016/j.jcrysgro.2011.02.010
Lin, Huang De, Wyatt, Jeffery L., Koshka, Yaroslav (2006) Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor. Materials Science Forum, 527. 171-174 doi:10.4028/www.scientific.net/msf.527-529.171
Kotamraju, Siva Prasad, Krishnan, Bharat, Koshka, Yaroslav (2010) Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors. Materials Science Forum, 645. 103-106 doi:10.4028/www.scientific.net/msf.645-648.103
 
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