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Benaissa, M., Vennéguès, P., Tottereau, O., Nguyen, L., Semond, F. (2006) Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. Applied Physics Letters, 89 (23). 231903pp. doi:10.1063/1.2399940

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots
JournalApplied Physics Letters
AuthorsBenaissa, M.Author
Vennéguès, P.Author
Tottereau, O.Author
Nguyen, L.Author
Semond, F.Author
Year2006 (December 4)Volume89
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2399940Search in ResearchGate
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Mindat Ref. ID8551165Long-form Identifiermindat:1:5:8551165:9
GUID0
Full ReferenceBenaissa, M., Vennéguès, P., Tottereau, O., Nguyen, L., Semond, F. (2006) Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. Applied Physics Letters, 89 (23). 231903pp. doi:10.1063/1.2399940
Plain TextBenaissa, M., Vennéguès, P., Tottereau, O., Nguyen, L., Semond, F. (2006) Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. Applied Physics Letters, 89 (23). 231903pp. doi:10.1063/1.2399940
In(2006, December) Applied Physics Letters Vol. 89 (23) AIP Publishing

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Korytov, M., Benaissa, M., Brault, J., Huault, T., Neisius, T., Vennéguès, P. (2009) Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy. Applied Physics Letters, 94 (14). 143105pp. doi:10.1063/1.3115027
Alloing, B., Vézian, S., Tottereau, O., Vennéguès, P., Beraudo, E., Zuniga-Pérez, J. (2011) On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy. Applied Physics Letters, 98 (1). 11914pp. doi:10.1063/1.3525170
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