Wuu, D. S., Wang, W. K., Wen, K. S., Huang, S. C., Lin, S. H., Huang, S. Y., Lin, C. F., Horng, R. H. (2006) Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template. Applied Physics Letters, 89 (16). 161105pp. doi:10.1063/1.2363148

See Also

These are possibly similar items as determined by title/reference text matching only.

	Wuu, D. S., Wang, W. K., Wen, K. S., Huang, S. C., Lin, S. H., Horng, R. H., Yu, Y. S., Pan, M. H. (2006) Fabrication of Pyramidal Patterned Sapphire Substrates for High-Efficiency InGaN-Based Light Emitting Diodes. Journal of the Electrochemical Society, 153. doi:10.1149/1.2209587
	Wang, W. K., Huang, S. Y., Huang, S. H., Wen, K. S., Wuu, D. S., Horng, R. H. (2006) Fabrication and efficiency improvement of micropillar InGaN∕Cu light-emitting diodes with vertical electrodes. Applied Physics Letters, 88 (18). 181113pp. doi:10.1063/1.2201622
	Horng, R. H., Chiang, C. C., Hsiao, H. Y., Zheng, X., Wuu, D. S., Lin, H. I. (2008) Improved thermal management of GaN/sapphire light-emitting diodes embedded in reflective heat spreaders. Applied Physics Letters, 93 (11). 111907pp. doi:10.1063/1.2983740
	Horng, R. H., Wuu, D. S., Wei, S. C., Tseng, C. Y., Huang, M. F., Chang, K. H., Liu, P. H., Lin, K. C. (1999) AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding. Applied Physics Letters, 75 (20). 3054-3056 doi:10.1063/1.125228
	Horng, R. H., Wuu, D. S., Wei, S. C., Huang, M. F., Chang, K. H., Liu, P. H., Lin, K. C. (1999) AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology. Applied Physics Letters, 75 (2). 154-156 doi:10.1063/1.124303
	Horng, R. H., Yang, C. C., Wu, J. Y., Huang, S. H., Lee, C. E., Wuu, D. S. (2005) GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography. Applied Physics Letters, 86 (22). 221101pp. doi:10.1063/1.1940723
	Craven, M. D., Lim, S. H., Wu, F., Speck, J. S., DenBaars, S. P. (2002) Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN. Applied Physics Letters, 81 (7). 1201-1203 doi:10.1063/1.1498010
	Horng, R. H., Lee, C. E., Hsu, S. C., Huang, S. H., Wu, C. C., Kung, C. Y., Wuu, D. S. (2004) High-power GaN light-emitting diodes with patterned copper substrates by electroplating. phys. stat. sol. (a), 201 (12) 2786-2790 doi:10.1002/pssa.200405091
	Reshchikov, M. A., Huang, D., Yun, F., He, L., Morkoç, H., Reynolds, D. C., Park, S. S., Lee, K. Y. (2001) Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template. Applied Physics Letters, 79 (23). 3779-3781 doi:10.1063/1.1421421
	Lo, M. H., Tu, P. M., Wang, C. H., Hung, C. W., Hsu, S. C., Cheng, Y. J., Kuo, H. C., Zan, H. W., Wang, S. C., Chang, C. Y., Huang, S. C. (2009) High efficiency light emitting diode with anisotropically etched GaN-sapphire interface. Applied Physics Letters, 95 (4). 41109pp. doi:10.1063/1.3190504
	Wang, Y. D., Zang, K. Y., Chua, S. J., Tripathy, S., Zhou, H. L., Fonstad, C. G. (2006) Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth. Applied Physics Letters, 88 (21). 211908pp. doi:10.1063/1.2207487