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Khan, N., Li, J. (2006) Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells. Applied Physics Letters, 89 (15). 151916pp. doi:10.1063/1.2362587

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Reference TypeJournal (article/letter/editorial)
TitleEffects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells
JournalApplied Physics Letters
AuthorsKhan, N.Author
Li, J.Author
Year2006 (October 9)Volume89
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2362587Search in ResearchGate
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Mindat Ref. ID8550086Long-form Identifiermindat:1:5:8550086:6
GUID0
Full ReferenceKhan, N., Li, J. (2006) Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells. Applied Physics Letters, 89 (15). 151916pp. doi:10.1063/1.2362587
Plain TextKhan, N., Li, J. (2006) Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells. Applied Physics Letters, 89 (15). 151916pp. doi:10.1063/1.2362587
In(2006, October) Applied Physics Letters Vol. 89 (15) AIP Publishing

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Sugawara, Mitsuru (1992) Theoretical calculation of optical gain in InxGa1−xAs/InP quantum wells under biaxially compressive and tensile strain. Applied Physics Letters, 60 (15). 1842-1844 doi:10.1063/1.107182
Liliental-Weber, Z., dos Reis, Roberto (2024) Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells. Journal of Applied Physics, 135 (9) doi:10.1063/5.0185713
Das, Tapas, Kabi, Sanjib, Biswas, Dipankar (2009) Calculations for the band lineup of strained InxGa1−xN/GaN quantum wells: Effects of strain on the band offsets. Journal of Applied Physics, 105 (4). 46101pp. doi:10.1063/1.3066716
Lü, W., Li, D. B., Li, C. R., Shen, F., Zhang, Z. (2004) Effect of critical thickness on structural and optical properties of InxGa1−xN/GaN multiple quantum wells. Journal of Applied Physics, 95 (8). 4362-4366 doi:10.1063/1.1667010
Chen, C. H., Chen, W. H., Chen, Y. F., Lin, T. Y. (2003) Piezoelectric, electro-optical, and photoelastic effects in InxGa1−xN/GaN multiple quantum wells. Applied Physics Letters, 83 (9). 1770-1772 doi:10.1063/1.1604176
Oh, Eunsoon, Sone, Cheolsoo, Nam, Okhyun, Park, Hyeongsoo, Park, Yongjo (2000) Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1−xN quantum wells. Applied Physics Letters, 76 (22). 3242-3244 doi:10.1063/1.126594
Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X. (1998) Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells. Applied Physics Letters, 73 (12). 1724-1726 doi:10.1063/1.122258
Schörmann, J., Potthast, S., As, D. J., Lischka, K. (2006) Near ultraviolet emission from nonpolar cubic AlxGa1−xN∕GaN quantum wells. Applied Physics Letters, 89 (13). 131910pp. doi:10.1063/1.2357587
Kim, H. S., Lin, J. Y., Jiang, H. X., Chow, W. W., Botchkarev, A., Morkoç, H. (1998) Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells. Applied Physics Letters, 73 (23). 3426-3428 doi:10.1063/1.122786
Huang, Wen-Deng, Chen, Guang-De, Ren, Ya-Jie (2012) Effect of ternary mixed crystals on interface optical phonons in wurtizte InxGa1−xN/GaN quantum wells. Journal of Applied Physics, 112 (5). 53704pp. doi:10.1063/1.4748173
Lü, W., Li, C. R., Zhang, Z. (2005) Study of band structure InxGa1−xN∕GaN multiple quantum wells by high-resolution electron microscopy and electron holography. Applied Physics Letters, 86 (4). 41902pp. doi:10.1063/1.1856138
 
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