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Kim, Jeehwan, Xie, Ya-Hong (2006) Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates. Applied Physics Letters, 89 (15). 152117pp. doi:10.1063/1.2360930

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates
JournalApplied Physics Letters
AuthorsKim, JeehwanAuthor
Xie, Ya-HongAuthor
Year2006 (October 9)Volume89
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2360930Search in ResearchGate
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Mindat Ref. ID8550045Long-form Identifiermindat:1:5:8550045:9
GUID0
Full ReferenceKim, Jeehwan, Xie, Ya-Hong (2006) Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates. Applied Physics Letters, 89 (15). 152117pp. doi:10.1063/1.2360930
Plain TextKim, Jeehwan, Xie, Ya-Hong (2006) Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates. Applied Physics Letters, 89 (15). 152117pp. doi:10.1063/1.2360930
In(2006, October) Applied Physics Letters Vol. 89 (15) AIP Publishing

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Kim, Jeehwan, Li, Biyun, Xie, Ya-Hong (2007) A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates. Applied Physics Letters, 91 (25). 252108pp. doi:10.1063/1.2827194
Yoon, Tae-Sik, Liu, Jian, Noori, Atif M., Goorsky, Mark S., Xie, Ya-Hong (2005) Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers. Applied Physics Letters, 87 (1). 12104pp. doi:10.1063/1.1988986
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