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Chen, Florence W., Li, Tsu-Tsung A., Cotter, Jeffrey E. (2006) Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 88 (26). 263514pp. doi:10.1063/1.2217167

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Reference TypeJournal (article/letter/editorial)
TitlePassivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride
JournalApplied Physics Letters
AuthorsChen, Florence W.Author
Li, Tsu-Tsung A.Author
Cotter, Jeffrey E.Author
Year2006 (June 26)Volume88
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.2217167Search in ResearchGate
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Mindat Ref. ID8548314Long-form Identifiermindat:1:5:8548314:3
GUID0
Full ReferenceChen, Florence W., Li, Tsu-Tsung A., Cotter, Jeffrey E. (2006) Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 88 (26). 263514pp. doi:10.1063/1.2217167
Plain TextChen, Florence W., Li, Tsu-Tsung A., Cotter, Jeffrey E. (2006) Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 88 (26). 263514pp. doi:10.1063/1.2217167
In(2006, June) Applied Physics Letters Vol. 88 (26) AIP Publishing

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De Wolf, Stefaan, Beaucarne, Guy (2006) Surface passivation properties of boron-doped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-type crystalline Si substrates. Applied Physics Letters, 88 (2). 22104pp. doi:10.1063/1.2164902
Jaouad, A., Aimez, V. (2006) Passivation of air-exposed AlGaAs using low frequency plasma-enhanced chemical vapor deposition of silicon nitride. Applied Physics Letters, 89 (9). 92125pp. doi:10.1063/1.2345030
Klein, D., Kunst, M. (2011) Study of surface passivation of crystalline silicon with amorphous silicon carbide deposited by plasma enhanced chemical vapor deposition. Applied Physics Letters, 99 (23). 232106pp. doi:10.1063/1.3665617
Cai, L., Rohatgi, A., Han, S., May, G., Zou, M. (1998) Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation. Journal of Applied Physics, 83 (11). 5885-5889 doi:10.1063/1.367450
Kerr, M. J., Schmidt, J., Cuevas, A., Bultman, J. H. (2001) Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. Journal of Applied Physics, 89 (7). 3821-3826 doi:10.1063/1.1350633
Chen, Florence W., Cotter, Jeffrey E. (2006) Contactless technique to quantify the edge-junction recombination in solar cells. Applied Physics Letters, 89 (26). 263509pp. doi:10.1063/1.2424676
Nguyen, Tue, Van Nguyen, Son, Dobuzinsky, David M. (1993) Evidence of a shallow junction formation from plasma enhanced chemical vapor deposition of boron nitride and silicon boron nitride. Applied Physics Letters, 63 (15). 2103-2105 doi:10.1063/1.110579
Basa, D. K., Bose, M., Bose, D. N. (2000) Capacitance–voltage measurements on plasma enhanced chemical vapor deposited silicon nitride films. Journal of Applied Physics, 87 (9). 4324-4326 doi:10.1063/1.373073
Kanicki, J., Hug, S. (1989) Spatial charge distribution in the plasma‐enhanced chemical vapor deposited nitrogen‐rich silicon nitride. Applied Physics Letters, 54 (8). 733-735 doi:10.1063/1.100876
Larionova, Yevgeniya, Mertens, Verena, Harder, Nils-Peter, Brendel, Rolf (2010) Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks. Applied Physics Letters, 96 (3). 32105pp. doi:10.1063/1.3291681
Mueller, Thomas, Schwertheim, Stefan, Fahrner, Wolfgang R. (2010) Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications. Journal of Applied Physics, 107 (1). 14504pp. doi:10.1063/1.3264626
 
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