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Park, H. D., Prokes, S. M., Cammarata, R. C. (2005) Growth of epitaxial InAs nanowires in a simple closed system. Applied Physics Letters, 87 (6). 63110pp. doi:10.1063/1.1999846

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of epitaxial InAs nanowires in a simple closed system
JournalApplied Physics Letters
AuthorsPark, H. D.Author
Prokes, S. M.Author
Cammarata, R. C.Author
Year2005 (August 8)Volume87
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1999846Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8545979Long-form Identifiermindat:1:5:8545979:3
GUID0
Full ReferencePark, H. D., Prokes, S. M., Cammarata, R. C. (2005) Growth of epitaxial InAs nanowires in a simple closed system. Applied Physics Letters, 87 (6). 63110pp. doi:10.1063/1.1999846
Plain TextPark, H. D., Prokes, S. M., Cammarata, R. C. (2005) Growth of epitaxial InAs nanowires in a simple closed system. Applied Physics Letters, 87 (6). 63110pp. doi:10.1063/1.1999846
In(2005, August) Applied Physics Letters Vol. 87 (6) AIP Publishing

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Park, Hyun D., Prokes, S. M., Twigg, M. E., Cammarata, Robert C., Gaillot, Anne-Claire (2006) Si-assisted growth of InAs nanowires. Applied Physics Letters, 89 (22). 223125pp. doi:10.1063/1.2398917
Park, Hyun D., Prokes, S. M. (2007) Study of the initial nucleation and growth of catalyst-free InAs and Ge nanowires. Applied Physics Letters, 90 (20). 203104pp. doi:10.1063/1.2740105
Park, Hyun D., Gaillot, Anne-Claire, Prokes, S.M., Cammarata, Robert C. (2006) Observation of size dependent liquidus depression in the growth of InAs nanowires. Journal of Crystal Growth, 296 (2). 159-164 doi:10.1016/j.jcrysgro.2006.08.033
Schlesinger, T. E., Cammarata, R. C., Prokes, S. M. (1991) Kinetics of silicide formation in chromium‐amorphous silicon multilayered films. Applied Physics Letters, 59 (4). 449-451 doi:10.1063/1.105459
Kaplan, R., Prokes, S. M., Binari, S. C., Kelner, G. (1996) Growth and properties of scandium epitaxial films on GaN. Applied Physics Letters, 68 (23). 3248-3250 doi:10.1063/1.116563
Prokes, S. M., Alexson, D. A., Glembocki, O. J., Park, H. D., Rendell, R. W. (2009) Effect of crossing geometry on the plasmonic behavior of dielectric core/metal sheath nanowires. Applied Physics Letters, 94 (9). 93105pp. doi:10.1063/1.3094129
Prokes, S. M., Arnold, Stephen (2005) Stress-driven formation of Si nanowires. Applied Physics Letters, 86 (19). 193105pp. doi:10.1063/1.1925756
Cai, X. M., Djurišić, A. B., Xie, M. H., Chiu, C. S., Gwo, S. (2005) Growth mechanism of stacked-cone and smooth-surface GaN nanowires. Applied Physics Letters, 87 (18). 183103pp. doi:10.1063/1.2126118
Schlesinger, T. E., Cammarata, R. C., Prokes, S. M. (1991) Erratum: Kinetics of silicide formation in chromium‐amorphous silicon multilayered films [Appl. Phys. Lett. 59, 449 (1991)]. Applied Physics Letters, 59 (14). 1799 doi:10.1063/1.106369
Cammarata, R. C., Sieradzki, K., Spaepen, F. (2000) Simple model for interface stresses with application to misfit dislocation generation in epitaxial thin films. Journal of Applied Physics, 87 (3). 1227-1234 doi:10.1063/1.372001
Choi, C.‐H., Barnett, S. A. (1989) Nucleation and epitaxial growth of InAs on Si (100) by ion‐assisted deposition. Applied Physics Letters, 55 (22). 2319-2321 doi:10.1063/1.102049
 
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