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Park, K.-B., Pelz, J. P., Grim, J., Skowronski, M. (2005) Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy. Applied Physics Letters, 87 (23). 232103pp. doi:10.1063/1.2138442

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Reference TypeJournal (article/letter/editorial)
TitleQuantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy
JournalApplied Physics Letters
AuthorsPark, K.-B.Author
Pelz, J. P.Author
Grim, J.Author
Skowronski, M.Author
Year2005 (December 5)Volume87
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2138442Search in ResearchGate
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Mindat Ref. ID8545337Long-form Identifiermindat:1:5:8545337:3
GUID0
Full ReferencePark, K.-B., Pelz, J. P., Grim, J., Skowronski, M. (2005) Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy. Applied Physics Letters, 87 (23). 232103pp. doi:10.1063/1.2138442
Plain TextPark, K.-B., Pelz, J. P., Grim, J., Skowronski, M. (2005) Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy. Applied Physics Letters, 87 (23). 232103pp. doi:10.1063/1.2138442
In(2005, December) Applied Physics Letters Vol. 87 (23) AIP Publishing

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Park, K.-B., Ding, Y., Pelz, J. P., Neudeck, P. G., Trunek, A. J. (2006) Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy. Applied Physics Letters, 89 (4). 42103pp. doi:10.1063/1.2218302
Tivarus, C., Pelz, J. P., Hudait, M. K., Ringel, S. A. (2005) Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts. Applied Physics Letters, 87 (18). 182105pp. doi:10.1063/1.2120899
Im, H.-J., Kaczer, B., Pelz, J. P., Choyke, W. J. (1998) Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC. Applied Physics Letters, 72 (7). 839-841 doi:10.1063/1.120910
Ha, S., Hu, K., Skowronski, M., Sumakeris, J. J., Paisley, M. J., Das, M. K. (2004) Stacking fault formation in SiC p-i-n diodes of (11-20) orientation. Applied Physics Letters, 84 (25). 5267-5269 doi:10.1063/1.1765209
Ding, Y., Park, K.-B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B. J., Meidia, H., Mahajan, S. (2004) Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy. Physical Review B, 69 (4) doi:10.1103/physrevb.69.041305
Maximenko, S. I., Sudarshan, T. S. (2005) Stacking fault nucleation sites in diffused 4H-SiC p‐i‐n diodes. Journal of Applied Physics, 97 (7). 74501pp. doi:10.1063/1.1872196
Heller, E. R., Tivarus, C., Pelz, J. P. (2003) Avalanche ballistic electron emission microscopy with single hot-electron sensitivity. Applied Physics Letters, 83 (14). 2841-2843 doi:10.1063/1.1613996
Park, K.-B., Ding, Y., Pelz, J. P., Mikhov, M. K., Wang, Y., Skromme, B. J. (2005) Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC. Applied Physics Letters, 86 (22). 222109pp. doi:10.1063/1.1935757
Chung, H. J., Liu, J. Q., Skowronski, M. (2002) Stacking fault formation in highly doped 4H-SiC epilayers during annealing. Applied Physics Letters, 81 (20). 3759-3761 doi:10.1063/1.1519961
Kaczer, B., Im, H.-J., Pelz, J. P., Wallace, R. M. (1998) Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy. Applied Physics Letters, 73 (13). 1871-1873 doi:10.1063/1.122310
Park, Kibog, Seok Go, Heung, Jeon, Youngeun, Pelz, Jonathan P., Zhang, Xuan, Skowronski, Marek (2011) Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate. Applied Physics Letters, 99 (25). 252102pp. doi:10.1063/1.3670329
 
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