Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J. (2005) Gallium nitride surface quantum wells. Applied Physics Letters, 87 (19). 192117pp. doi:10.1063/1.2123396

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Reference Type	Journal (article/letter/editorial)
Title	Gallium nitride surface quantum wells
Journal	Applied Physics Letters
Authors	Muth, J. F.		Author
	Zhang, X.		Author
	Cai, A.		Author
	Fothergill, D.		Author
	Roberts, J. C.		Author
	Rajagopal, P.		Author
	Cook, J. W.		Author
	Piner, E. L.		Author
	Linthicum, K. J.		Author
Year	2005 (November 7)	Volume	87
Issue	19
Publisher	AIP Publishing
DOI	doi:10.1063/1.2123396Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8544875	Long-form Identifier	mindat:1:5:8544875:1
GUID	0
Full Reference	Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J. (2005) Gallium nitride surface quantum wells. Applied Physics Letters, 87 (19). 192117pp. doi:10.1063/1.2123396
Plain Text	Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J. (2005) Gallium nitride surface quantum wells. Applied Physics Letters, 87 (19). 192117pp. doi:10.1063/1.2123396
In	(2005, November) Applied Physics Letters Vol. 87 (19) AIP Publishing

	Glinka, Y. D., Shahbazyan, T. V., Everitt, H. O., Roberts, J., Rajagopal, P., Cook, J., Piner, E., Linthicum, K. (2009) Effect of the surface states on photoluminescence from surface GaN/Al 0.2 Ga 0.8 N quantum wells. EPL (Europhysics Letters), 87. 47007pp. doi:10.1209/0295-5075/87/47007
	Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J. (2008) Stimulated emission and lasing from an Al0.13Ga0.87N∕GaN double heterostructure grown on a silicon substrate. Applied Physics Letters, 92 (2). 21118pp. doi:10.1063/1.2819614
	Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J. (2007) Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate. Applied Physics Letters, 90 (15). 151116pp. doi:10.1063/1.2722201
	Kang, B. S., Pearton, S. J., Chen, J. J., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2006) Electrical detection of deoxyribonucleic acid hybridization with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 89 (12). 122102pp. doi:10.1063/1.2354491
	Wang, H. T., Kang, B. S., Ren, F., Pearton, S. J., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2007) Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 91 (22). 222101pp. doi:10.1063/1.2815931
	Hung, S. C., Wang, Y. L., Hicks, B., Pearton, S. J., Dennis, D. M., Ren, F., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chi, G. C. (2008) Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 92 (19). 193903pp. doi:10.1063/1.2927372
	Kang, B. S., Wang, H. T., Lele, T. P., Tseng, Y., Ren, F., Pearton, S. J., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2007) Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 91 (11). 112106pp. doi:10.1063/1.2772192
	Chen, K. H., Kang, B. S., Wang, H. T., Lele, T. P., Ren, F., Wang, Y. L., Chang, C. Y., Pearton, S. J., Dennis, D. M., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2008) c-erbB-2 sensing using AlGaN∕GaN high electron mobility transistors for breast cancer detection. Applied Physics Letters, 92 (19). 192103pp. doi:10.1063/1.2926656
	Chang, C. Y., Kang, B. S., Wang, H. T., Ren, F., Wang, Y. L., Pearton, S. J., Dennis, D. M., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2008) CO2 detection using polyethylenimine/starch functionalized AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 92 (23). 232102pp. doi:10.1063/1.2937126
	Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., Pearton, S. J. (2005) Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Applied Physics Letters, 86 (25). 253502pp. doi:10.1063/1.1952568
	Kang, B. S., Wang, H. T., Ren, F., Pearton, S. J., Morey, T. E., Dennis, D. M., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J. (2007) Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 91 (25). 252103pp. doi:10.1063/1.2825574

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Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J. (2005) Gallium nitride surface quantum wells. Applied Physics Letters, 87 (19). 192117pp. doi:10.1063/1.2123396

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