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Zhang, Z., Sudarshan, T. S. (2005) Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy. Applied Physics Letters, 87 (16). 161917pp. doi:10.1063/1.2108109

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Reference TypeJournal (article/letter/editorial)
TitleEvolution of basal plane dislocations during 4H-silicon carbide homoepitaxy
JournalApplied Physics Letters
AuthorsZhang, Z.Author
Sudarshan, T. S.Author
Year2005 (October 17)Volume87
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2108109Search in ResearchGate
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Mindat Ref. ID8544656Long-form Identifiermindat:1:5:8544656:8
GUID0
Full ReferenceZhang, Z., Sudarshan, T. S. (2005) Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy. Applied Physics Letters, 87 (16). 161917pp. doi:10.1063/1.2108109
Plain TextZhang, Z., Sudarshan, T. S. (2005) Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy. Applied Physics Letters, 87 (16). 161917pp. doi:10.1063/1.2108109
In(2005, October) Applied Physics Letters Vol. 87 (16) AIP Publishing

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Zhang, Z., Sudarshan, T. S. (2005) Basal plane dislocation-free epitaxy of silicon carbide. Applied Physics Letters, 87 (15). 151913pp. doi:10.1063/1.2093931
Zhang, Z., Moulton, E., Sudarshan, T. S. (2006) Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrate. Applied Physics Letters, 89 (8). 81910pp. doi:10.1063/1.2337874
Zhang, X., Skowronski, M., Liu, K. X., Stahlbush, R. E., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J. (2007) Glide and multiplication of basal plane dislocations during 4H‐SiC homoepitaxy. Journal of Applied Physics, 102 (9). 93520pp. doi:10.1063/1.2809343
Zhang, Xuan, Tsuchida, Hidekazu (2012) Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing. Journal of Applied Physics, 111 (12). 123512pp. doi:10.1063/1.4729326
Abadier, Mina, Song, Haizheng, Sudarshan, Tangali S., Picard, Yoosuf N., Skowronski, Marek (2015) Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth. Journal of Crystal Growth, 418. 7-14 doi:10.1016/j.jcrysgro.2015.02.004
Maximenko, S., Soloviev, S., Cherednichenko, D., Sudarshan, T. (2005) Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current. Journal of Applied Physics, 97 (1). 13533pp. doi:10.1063/1.1828605
Zhang, Ze Hong, Shrivastava, Amitesh, Sudarshan, Tangali S. (2006) Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?. Materials Science Forum, 527. 419-422 doi:10.4028/www.scientific.net/msf.527-529.419
Maximenko, S., Soloviev, S., Cherednichenko, D., Sudarshan, T. (2004) Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes. Applied Physics Letters, 84 (9). 1576-1578 doi:10.1063/1.1652229
Blumenau, A.T., Jones, R., Öberg, S., Briddon, P.R., Frauenheim, T. (2003) Basal plane partial dislocations in silicon carbide. Physica B: Condensed Matter, 340. 160-164 doi:10.1016/j.physb.2003.09.046
Maximenko, Serguei I., Pirouz, Pirouz, Sudarshan, Tangali S. (2005) Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes. Applied Physics Letters, 87 (3). 33503pp. doi:10.1063/1.1999297
Shimada, Kana, Asada, Kanta, Yodo, Mikako, Ohtani, Noboru (2020) Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals. Journal of Applied Physics, 127 (16) 165704pp. doi:10.1063/5.0007219
 
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