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Wang, T., Liu, Y. H., Lee, Y. B., Ao, J. P., Bai, J., Sakai, S. (2002) 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Applied Physics Letters, 81 (14). 2508-2510 doi:10.1063/1.1510967

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Reference TypeJournal (article/letter/editorial)
Title1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
JournalApplied Physics Letters
AuthorsWang, T.Author
Liu, Y. H.Author
Lee, Y. B.Author
Ao, J. P.Author
Bai, J.Author
Sakai, S.Author
Year2002 (September 30)Volume81
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1510967Search in ResearchGate
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Mindat Ref. ID8533191Long-form Identifiermindat:1:5:8533191:0
GUID0
Full ReferenceWang, T., Liu, Y. H., Lee, Y. B., Ao, J. P., Bai, J., Sakai, S. (2002) 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Applied Physics Letters, 81 (14). 2508-2510 doi:10.1063/1.1510967
Plain TextWang, T., Liu, Y. H., Lee, Y. B., Ao, J. P., Bai, J., Sakai, S. (2002) 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Applied Physics Letters, 81 (14). 2508-2510 doi:10.1063/1.1510967
In(2002, September) Applied Physics Letters Vol. 81 (14) AIP Publishing

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Wang, Q., Gong, Y. P., Zhang, J. F., Bai, J., Ranalli, F., Wang, T. (2009) Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire. Applied Physics Letters, 95 (16). 161904pp. doi:10.1063/1.3253416
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