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Bhattacharya, P., Ghosh, S. (2002) Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]. Applied Physics Letters, 81 (14). 2661-2662 doi:10.1063/1.1510944

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Reference TypeJournal (article/letter/editorial)
TitleResponse to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]
JournalApplied Physics Letters
AuthorsBhattacharya, P.Author
Ghosh, S.Author
Year2002 (September 30)Volume81
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1510944Search in ResearchGate
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Mindat Ref. ID8533185Long-form Identifiermindat:1:5:8533185:9
GUID0
Full ReferenceBhattacharya, P., Ghosh, S. (2002) Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]. Applied Physics Letters, 81 (14). 2661-2662 doi:10.1063/1.1510944
Plain TextBhattacharya, P., Ghosh, S. (2002) Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]. Applied Physics Letters, 81 (14). 2661-2662 doi:10.1063/1.1510944
In(2002, September) Applied Physics Letters Vol. 81 (14) AIP Publishing

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Riedl, T., Hangleiter, A. (2002) Comment on “Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature” [Appl. Phys. Lett. 80, 3482 (2002)]. Applied Physics Letters, 81 (14). 2659-2660 doi:10.1063/1.1510943
Bhattacharya, P., Ghosh, S. (2002) Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature. Applied Physics Letters, 80 (19). 3482-3484 doi:10.1063/1.1478129
Ghosh, S., Pradhan, S., Bhattacharya, P. (2002) Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature. Applied Physics Letters, 81 (16). 3055-3057 doi:10.1063/1.1514823
Hanbicki, A. T., Jonker, B. T. (2002) Response to “Comment on ‘Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor’ ” [Appl. Phys. Lett. 81, 2130 (2002)]. Applied Physics Letters, 81 (11). 2131-2132 doi:10.1063/1.1507361
Lang, Roy (2002) Response to “Comment on ‘Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots’ ” [Appl. Phys. Lett. 81, 565 (2002)]. Applied Physics Letters, 81 (3). 566 doi:10.1063/1.1494472
Jansen, R. (2002) Comment on “Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor” [Appl. Phys. Lett. 80, 1240 (2002)]. Applied Physics Letters, 81 (11). 2130 doi:10.1063/1.1507360
Uhm, Han S., Choi, Eun H., Choi, Myung C. (2002) Response to “Comment on ‘Forward current propagation beyond the virtual cathode formed by a high injection current’ ” [Appl. Phys. Lett. 81, 1530 (2002)]. Applied Physics Letters, 81 (8). 1532-1533 doi:10.1063/1.1495885
Ghosh, S., Bhattacharya, P. (2002) Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode. Applied Physics Letters, 80 (4). 658-660 doi:10.1063/1.1436526
Wang, N., Han, X. J., Wei, B. (2002) Response to “Comment on ‘Specific heat and thermodynamic properties of undercooled liquid cobalt’ ” [Appl. Phys. Lett. 81, 3290 (2002)]. Applied Physics Letters, 81 (17). 3292 doi:10.1063/1.1515361
Srinivasan, S., Bertram, F., Bell, A., Ponce, F. A. (2002) Response to “Comment on ‘Low Stokes shift in thick and homogeneous InGaN epilayers’ ” [Appl. Phys. Lett 81, 1353 (2002)]. Applied Physics Letters, 81 (7). 1355-1356 doi:10.1063/1.1498004
Mi, Z., Bhattacharya, P., Fathpour, S. (2005) High-speed 1.3μm tunnel injection quantum-dot lasers. Applied Physics Letters, 86 (15). 153109pp. doi:10.1063/1.1899230
 
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