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Chow, W. W., Amano, H., Takeuchi, T., Han, J. (1999) Quantum-well width dependence of threshold current density in InGaN lasers. Applied Physics Letters, 75 (2). 244-246 doi:10.1063/1.124336

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Reference TypeJournal (article/letter/editorial)
TitleQuantum-well width dependence of threshold current density in InGaN lasers
JournalApplied Physics Letters
AuthorsChow, W. W.Author
Amano, H.Author
Takeuchi, T.Author
Han, J.Author
Year1999 (July 12)Volume75
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.124336Search in ResearchGate
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Mindat Ref. ID8524949Long-form Identifiermindat:1:5:8524949:7
GUID0
Full ReferenceChow, W. W., Amano, H., Takeuchi, T., Han, J. (1999) Quantum-well width dependence of threshold current density in InGaN lasers. Applied Physics Letters, 75 (2). 244-246 doi:10.1063/1.124336
Plain TextChow, W. W., Amano, H., Takeuchi, T., Han, J. (1999) Quantum-well width dependence of threshold current density in InGaN lasers. Applied Physics Letters, 75 (2). 244-246 doi:10.1063/1.124336
In(1999, July) Applied Physics Letters Vol. 75 (2) AIP Publishing

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Chow, W. W., Amano, H., Akasaki, I. (2000) Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers. Applied Physics Letters, 76 (13). 1647-1649 doi:10.1063/1.126123
Chow, W. W., Kneissl, M., Northrup, J. E., Johnson, N. M. (2007) Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers. Applied Physics Letters, 90 (10). 101116pp. doi:10.1063/1.2679969
Yeo, Y. C., Chong, T. C., Li, M. F., Fan, W. J. (1998) Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers. Journal of Applied Physics, 84 (4). 1813-1819 doi:10.1063/1.368338
Shieh, C., Mantz, J., Lee, H., Ackley, D., Engelmann, R. (1989) Anomalous dependence of threshold current on stripe width in gain‐guided strained‐layer InGaAs/GaAs quantum well lasers. Applied Physics Letters, 54 (25). 2521-2523 doi:10.1063/1.101081
Sugimura, Akira (1983) Structure‐dependent threshold current density in InGaAsP quantum well lasers. Applied Physics Letters, 42 (1). 17-19 doi:10.1063/1.93748
Yamamoto, Tsuyoshi, Nobuhara, Hiroyuki, Tanaka, Kazuhiro, Inoue, Tadao, Fujii, Takuya, Wakao, Kiyohide (1994) Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/InGaAsP Quantum-Well Lasers. Japanese Journal of Applied Physics, 33. 6199-6200 doi:10.1143/jjap.33.6199
Hader, J., Bossert, D., Stohs, J., Chow, W. W., Koch, S. W., Moloney, J. V. (1999) Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers. Applied Physics Letters, 74 (16). 2277-2279 doi:10.1063/1.123823
Smowton, P. M., Blood, P., Chow, W. W. (2000) Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers. Applied Physics Letters, 76 (12). 1522-1524 doi:10.1063/1.126083
Andreev, Aleksey D., Donetsky, Dmitry V. (1999) Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers. Applied Physics Letters, 74 (19). 2743-2745 doi:10.1063/1.124000
Shi, L., Poweleit, C. D., Ponce, F. A., Menendez, J., Chow, W. W. (2001) Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well. Applied Physics Letters, 79 (1). 75-77 doi:10.1063/1.1381422
Beernink, K. J., York, P. K., Coleman, J. J. (1989) Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (25). 2585-2587 doi:10.1063/1.101986
 
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