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Kim, Han -Ki, Seong, Tae -Yeon, Lee, S. M., Yoon, Young Soo (2003) Growth and properties of completely amorphous vanadium oxide cathode thin film with Pt co-sputtering method. Metals and Materials International, 9. 135-140 doi:10.1007/bf03027269

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and properties of completely amorphous vanadium oxide cathode thin film with Pt co-sputtering method
JournalMetals and Materials International
AuthorsKim, Han -KiAuthor
Seong, Tae -YeonAuthor
Lee, S. M.Author
Yoon, Young SooAuthor
Year2003 (April)Volume9
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf03027269Search in ResearchGate
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Mindat Ref. ID8026720Long-form Identifiermindat:1:5:8026720:3
GUID0
Full ReferenceKim, Han -Ki, Seong, Tae -Yeon, Lee, S. M., Yoon, Young Soo (2003) Growth and properties of completely amorphous vanadium oxide cathode thin film with Pt co-sputtering method. Metals and Materials International, 9. 135-140 doi:10.1007/bf03027269
Plain TextKim, Han -Ki, Seong, Tae -Yeon, Lee, S. M., Yoon, Young Soo (2003) Growth and properties of completely amorphous vanadium oxide cathode thin film with Pt co-sputtering method. Metals and Materials International, 9. 135-140 doi:10.1007/bf03027269
In(n.d.) Metals and Materials International Vol. 9. Springer Science and Business Media LLC

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Kim, Han-Ki, Seong, Tae-Yeon, Lee, S. M., Yoon, Young Soo (2003) Charge-discharge induced phase transformation of RuO2 electrode for thin film supercapacitor. Metals and Materials International, 9. 239-246 doi:10.1007/bf03027042
Park, H. Y., Lee, S. R., Cho, W. I., Kim, H. K., Lee, S. M., Kim, J. S., Yoon, Y. S. (2003) Phase change induced degradation of amorphous vanadium oxide cathode thin film during charge-discharge. Metals and Materials International, 9. 233-237 doi:10.1007/bf03027041
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Kim, Han-Ki, Kim, D.-G., Lee, K.-S., Huh, M.-S., Jeong, S. H., Kim, K. I., Seong, Tae-Yeon (2005) Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes. Applied Physics Letters, 86 (18). 183503pp. doi:10.1063/1.1923182
Kim, Sun-Jae, Lee, Soo-Yeon, Lee, Young-Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Kwon, Jang-Yeon, Han, Min-Koo (2011) Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 50 (2) 24104 doi:10.1143/jjap.50.024104
Kim, Sun-Jae, Lee, Soo-Yeon, Lee, Young-Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Kwon, Jang-Yeon, Han, Min-Koo (2011) Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 50 (2) 24104 doi:10.7567/jjap.50.024104
Lee, Soo-Yeon, Kim, Sun-Jae, Lee, Young Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Han, Min-Koo (2012) Effect of Channel Length on the Reliability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 51. 3 doi:10.1143/jjap.51.03cb03
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