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Liu, Wei, Yin, Kang, Su, Xianli, Li, Han, Yan, Yonggao, Tang, Xinfeng, Uher, Ctirad (2013) Enhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-type Mg2(1+z)(Si0.3Sn0.7)1−yGay. Intermetallics, 32. 352-361 doi:10.1016/j.intermet.2012.07.027

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-type Mg2(1+z)(Si0.3Sn0.7)1−yGay
JournalIntermetallics
AuthorsLiu, WeiAuthor
Yin, KangAuthor
Su, XianliAuthor
Li, HanAuthor
Yan, YonggaoAuthor
Tang, XinfengAuthor
Uher, CtiradAuthor
Year2013 (January)Volume32
PublisherElsevier BV
DOIdoi:10.1016/j.intermet.2012.07.027Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID7968646Long-form Identifiermindat:1:5:7968646:6
GUID0
Full ReferenceLiu, Wei, Yin, Kang, Su, Xianli, Li, Han, Yan, Yonggao, Tang, Xinfeng, Uher, Ctirad (2013) Enhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-type Mg2(1+z)(Si0.3Sn0.7)1−yGay. Intermetallics, 32. 352-361 doi:10.1016/j.intermet.2012.07.027
Plain TextLiu, Wei, Yin, Kang, Su, Xianli, Li, Han, Yan, Yonggao, Tang, Xinfeng, Uher, Ctirad (2013) Enhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-type Mg2(1+z)(Si0.3Sn0.7)1−yGay. Intermetallics, 32. 352-361 doi:10.1016/j.intermet.2012.07.027
In(n.d.) Intermetallics Vol. 32. Elsevier BV

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