Tuoc, Vu Ngoc (2008) First Principle Study on the Domain Matching Epitaxy Growth of Semiconductor Hetero-Interface. MATERIALS TRANSACTIONS, 49 (11). 2491-2496 doi:10.2320/matertrans.mb200818
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | First Principle Study on the Domain Matching Epitaxy Growth of Semiconductor Hetero-Interface | ||
| Journal | MATERIALS TRANSACTIONS | ||
| Authors | Tuoc, Vu Ngoc | Author | |
| Year | 2008 | Volume | 49 |
| Issue | 11 | ||
| Publisher | Japan Institute of Metals | ||
| DOI | doi:10.2320/matertrans.mb200818Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 7779527 | Long-form Identifier | mindat:1:5:7779527:4 |
| GUID | 0 | ||
| Full Reference | Tuoc, Vu Ngoc (2008) First Principle Study on the Domain Matching Epitaxy Growth of Semiconductor Hetero-Interface. MATERIALS TRANSACTIONS, 49 (11). 2491-2496 doi:10.2320/matertrans.mb200818 | ||
| Plain Text | Tuoc, Vu Ngoc (2008) First Principle Study on the Domain Matching Epitaxy Growth of Semiconductor Hetero-Interface. MATERIALS TRANSACTIONS, 49 (11). 2491-2496 doi:10.2320/matertrans.mb200818 | ||
| In | (2008) MATERIALS TRANSACTIONS Vol. 49 (11) Japan Institute of Metals | ||
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