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McWhan, D. B., Rice, T. M., Schmidt, P. H. (1969) Metal-Semiconductor Transition in Ytterbium and Strontium at High Pressure. Physical Review, 177 (3). 1063-1071 doi:10.1103/physrev.177.1063

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Reference TypeJournal (article/letter/editorial)
TitleMetal-Semiconductor Transition in Ytterbium and Strontium at High Pressure
JournalPhysical Review
AuthorsMcWhan, D. B.Author
Rice, T. M.Author
Schmidt, P. H.Author
Year1969 (January 15)Volume177
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrev.177.1063Search in ResearchGate
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Mindat Ref. ID7500544Long-form Identifiermindat:1:5:7500544:1
GUID0
Full ReferenceMcWhan, D. B., Rice, T. M., Schmidt, P. H. (1969) Metal-Semiconductor Transition in Ytterbium and Strontium at High Pressure. Physical Review, 177 (3). 1063-1071 doi:10.1103/physrev.177.1063
Plain TextMcWhan, D. B., Rice, T. M., Schmidt, P. H. (1969) Metal-Semiconductor Transition in Ytterbium and Strontium at High Pressure. Physical Review, 177 (3). 1063-1071 doi:10.1103/physrev.177.1063
In(1969, January) Physical Review Vol. 177 (3) American Physical Society (APS)

See Also

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McWhan, D. B., Rice, T. M. (1969) Critical Pressure for the Metal-Semiconductor Transition inV2O3. Physical Review Letters, 22 (17). 887-890 doi:10.1103/physrevlett.22.887
McWhan, D. B., Rice, T. M. (1969) Critical Pressure for the Metal‐Semiconductor Transition in V2O3. Journal of Applied Physics, 40 (3). 1336 doi:10.1063/1.1657661
McWhan, D. B., Rice, T. M., Remeika, J. P. (1969) Mott Transition in Cr-DopedV2O3. Physical Review Letters, 23 (24). 1384-1387 doi:10.1103/physrevlett.23.1384
McWhan, D. B., Souers, P. C., Jura, G. (1966) Magnetic and Structural Properties of Europium Metal and Europium Monoxide at High Pressure. Physical Review, 143 (2). 385-389 doi:10.1103/physrev.143.385
McWhan, D. B., Jayaraman, A., Remeika, J. P., Rice, T. M. (1975) Metal-Insulator Transition in(V1−xCrx)2O3. Physical Review Letters, 34 (9). 547-550 doi:10.1103/physrevlett.34.547
McWhan, D. B., Rice, T. M. (1967) Pressure Dependence of Itinerant Antiferromagnetism in Chromium. Physical Review Letters, 19 (15). 846-849 doi:10.1103/physrevlett.19.846
Gossard, A. C., McWhan, D. B., Remeika, J. P. (1970) High-Pressure Nuclear Resonance Study of the Metal-Insulator Transition ofV2O3. Physical Review B, 2 (9) 3762-3768 doi:10.1103/physrevb.2.3762
McWhan, D. B., Menth, A., Remeika, J. P., Brinkman, W. F., Rice, T. M. (1973) Metal-Insulator Transitions in Pure and DopedV2O3. Physical Review B, 7 (5) 1920-1931 doi:10.1103/physrevb.7.1920
Bucher, E., Schmidt, P. H., Jayaraman, A., Andres, K., Maita, J. P., Nassau, K., Dernier, P. D. (1970) New First-Order Phase Transition in High-Purity Ytterbium Metal. Physical Review B, 2 (10) 3911-3917 doi:10.1103/physrevb.2.3911
Berglund, C. N., Guggenheim, H. J. (1969) Electronic Properties of VO2near the Semiconductor-Metal Transition. Physical Review, 185 (3). 1022-1033 doi:10.1103/physrev.185.1022
Berglund, C. N., Jayaraman, A. (1969) Hydrostatic-Pressure Dependence of the Electronic Properties of VO2Near the Semiconductor-Metal Transition Temperature. Physical Review, 185 (3). 1034-1039 doi:10.1103/physrev.185.1034
 
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