Haynes, J. R., Westphal, W. C. (1956) Radiation Resulting from Recombination of Holes and Electrons in Silicon. Physical Review, 101 (6). 1676-1678 doi:10.1103/physrev.101.1676

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Reference Type	Journal (article/letter/editorial)
Title	Radiation Resulting from Recombination of Holes and Electrons in Silicon
Journal	Physical Review
Authors	Haynes, J. R.		Author
Authors	Westphal, W. C.		Author
Year	1956 (March 15)	Volume	101
Issue	6
Publisher	American Physical Society (APS)
DOI	doi:10.1103/physrev.101.1676
	Generate Citation Formats
Mindat Ref. ID	7477253	Long-form Identifier	mindat:1:5:7477253:7
GUID	0
Full Reference	Haynes, J. R., Westphal, W. C. (1956) Radiation Resulting from Recombination of Holes and Electrons in Silicon. Physical Review, 101 (6). 1676-1678 doi:10.1103/physrev.101.1676
Plain Text	Haynes, J. R., Westphal, W. C. (1956) Radiation Resulting from Recombination of Holes and Electrons in Silicon. Physical Review, 101 (6). 1676-1678 doi:10.1103/physrev.101.1676
In	(1956, March) Physical Review Vol. 101 (6) American Physical Society (APS)

	*Haynes, J. R. (1955) New Radiation Resulting from Recombination of Holes and Electrons in Germanium. Physical Review, 98 (6). 1866-1868 doi:10.1103/physrev.98.1866*
	*Haynes, J. R., Westphal, W. C. (1952) The Drift Mobility of Electrons in Silicon. Physical Review, 85 (4). 680 doi:10.1103/physrev.85.680*
	*Haynes, J. R., Shockley, W. (1951) The Mobility and Life of Injected Holes and Electrons in Germanium. Physical Review, 81 (5). 835-843 doi:10.1103/physrev.81.835*
	*Morrison, S. Roy (1956) Recombination of Electrons and Holes at Dislocations. Physical Review, 104 (3). 619-623 doi:10.1103/physrev.104.619*
	*van Roosbroeck, W., Shockley, W. (1954) Photon-Radiative Recombination of Electrons and Holes in Germanium. Physical Review, 94 (6). 1558-1560 doi:10.1103/physrev.94.1558*
	*Moss, T. S., Hawkins, T. H. (1956) Recombination Radiation from InSb. Physical Review, 101 (5). 1609-1610 doi:10.1103/physrev.101.1609*
	*Lee, C. A., Logan, R. A., Batdorf, R. L., Kleimack, J. J., Wiegmann, W. (1964) Ionization Rates of Holes and Electrons in Silicon. Physical Review, 134 (3). doi:10.1103/physrev.134.a761*
	*Vogel, F. L., Read, W. T., Lovell, L. C. (1954) Recombination of Holes and Electrons at Lineage Boundaries in Germanium. Physical Review, 94 (6). 1791-1792 doi:10.1103/physrev.94.1791.2*
	*Haynes, J. R., Shockley, W. (1951) The Mobility of Electrons in Silver Chloride. Physical Review, 82 (6). 935-943 doi:10.1103/physrev.82.935*
	*Ludwig, G. W., Watters, R. L. (1956) Drift and Conductivity Mobility in Silicon. Physical Review, 101 (6). 1699-1701 doi:10.1103/physrev.101.1699*
	*Wheeler, John A., Lamb, Willis E. (1956) Influence of Atomic Electrons on Radiation and Pair Production. Physical Review, 101 (6). 1836 doi:10.1103/physrev.101.1836*

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Haynes, J. R., Westphal, W. C. (1956) Radiation Resulting from Recombination of Holes and Electrons in Silicon. Physical Review, 101 (6). 1676-1678 doi:10.1103/physrev.101.1676

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