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Lakshmi, K.P., Asokan, S. (2013) Electrical switching in amorphous Si–Te–Ge thin films: Impact of input energy on crystallization process and switching parameters. Journal of Non-Crystalline Solids, 377. 175-178 doi:10.1016/j.jnoncrysol.2013.02.010

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Reference TypeJournal (article/letter/editorial)
TitleElectrical switching in amorphous Si–Te–Ge thin films: Impact of input energy on crystallization process and switching parameters
JournalJournal of Non-Crystalline Solids
AuthorsLakshmi, K.P.Author
Asokan, S.Author
Year2013 (October)Volume377
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2013.02.010Search in ResearchGate
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Mindat Ref. ID649565Long-form Identifiermindat:1:5:649565:1
GUID0
Full ReferenceLakshmi, K.P., Asokan, S. (2013) Electrical switching in amorphous Si–Te–Ge thin films: Impact of input energy on crystallization process and switching parameters. Journal of Non-Crystalline Solids, 377. 175-178 doi:10.1016/j.jnoncrysol.2013.02.010
Plain TextLakshmi, K.P., Asokan, S. (2013) Electrical switching in amorphous Si–Te–Ge thin films: Impact of input energy on crystallization process and switching parameters. Journal of Non-Crystalline Solids, 377. 175-178 doi:10.1016/j.jnoncrysol.2013.02.010
In(2013) Journal of Non-Crystalline Solids Vol. 377. Elsevier BV

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Lakshmi, K.P., Asokan, S. (2013) Multi-resistance states in the electrical switching behavior of amorphous Si15Te75Ge10 thin films: Possibility of multi-bit storage. Journal of Non-Crystalline Solids, 373. 13-17 doi:10.1016/j.jnoncrysol.2013.04.018
Lakshmi, K.P., Asokan, S. (2013) Temperature dependence of resistance and crystallization in amorphous Si15Te85−xGex thin films. Journal of Non-Crystalline Solids, 376. 94-98 doi:10.1016/j.jnoncrysol.2013.05.035
Das, Chandasree, Rao, G. Mohan, Asokan, S. (2011) Electrical switching and thermal studies on bulk Ge–Te–Bi glasses. Journal of Non-Crystalline Solids, 357 (1) 165-169 doi:10.1016/j.jnoncrysol.2010.09.046
Rahman, Mohammad Mahbubur, Rukmani, K., Asokan, S. (2011) Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages. Journal of Non-Crystalline Solids, 357 (3) 946-950 doi:10.1016/j.jnoncrysol.2010.11.100
Upadhyay, Manisha, Murugavel, Sevi (2013) Correlation between crystallization behavior, electrical switching and local atomic structure of Ge–Te glasses. Journal of Non-Crystalline Solids, 368. 34-39 doi:10.1016/j.jnoncrysol.2013.02.028
Das, Chandasree, Lokesh, R., Rao, G. Mohan, Asokan, S. (2010) Electrical switching behavior of amorphous Al23Te77 thin film sample. Journal of Non-Crystalline Solids, 356 (41) 2203-2206 doi:10.1016/j.jnoncrysol.2010.07.057
Selvaraju, V.C., Asokan, S., Srinivasan, V. (2004) Electrical switching in As–Te–Ag system–composition and temperature dependence. Journal of Non-Crystalline Solids, 333 (1) 16-21 doi:10.1016/j.jnoncrysol.2003.09.036
Csillag, A., Jäger, H. (1970) Energy-controlled switching process in the amorphous system TeAsGeSi. Journal of Non-Crystalline Solids, 2. 133-140 doi:10.1016/0022-3093(70)90128-6
Bhanu Prashanth, S.B., Asokan, S. (2009) Effect of antimony addition on the thermal and electrical-switching behavior of bulk Se–Te glasses. Journal of Non-Crystalline Solids, 355 (3) 164-168 doi:10.1016/j.jnoncrysol.2008.11.003
Anbarasu, M., Singh, K.K., Asokan, S. (2008) The presence of a thermally reversing window in Al–Te–Si glasses revealed by alternating differential scanning calorimetry and electrical switching studies. Journal of Non-Crystalline Solids, 354 (28) 3369-3374 doi:10.1016/j.jnoncrysol.2008.02.004
Malligavathy, M., Ananth Kumar, R.T., Das, Chandasree, Asokan, S., Pathinettam Padiyan, D. (2015) Growth and characteristics of amorphous Sb2Se3 thin films of various thicknesses for memory switching applications. Journal of Non-Crystalline Solids, 429. 93-97 doi:10.1016/j.jnoncrysol.2015.08.038
 
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