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Biron, Rémi, Pahud, Céline, Haug, Franz-Josef, Ballif, Christophe (2012) Origin of the Voc enhancement with a p-doped nc-SiOx:H window layer in n-i-p solar cells. Journal of Non-Crystalline Solids, 358 (17) 1958-1961 doi:10.1016/j.jnoncrysol.2012.01.058

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Reference TypeJournal (article/letter/editorial)
TitleOrigin of the Voc enhancement with a p-doped nc-SiOx:H window layer in n-i-p solar cells
JournalJournal of Non-Crystalline Solids
AuthorsBiron, RémiAuthor
Pahud, CélineAuthor
Haug, Franz-JosefAuthor
Ballif, ChristopheAuthor
Year2012 (September)Volume358
Issue17
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2012.01.058Search in ResearchGate
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Mindat Ref. ID648804Long-form Identifiermindat:1:5:648804:2
GUID0
Full ReferenceBiron, Rémi, Pahud, Céline, Haug, Franz-Josef, Ballif, Christophe (2012) Origin of the Voc enhancement with a p-doped nc-SiOx:H window layer in n-i-p solar cells. Journal of Non-Crystalline Solids, 358 (17) 1958-1961 doi:10.1016/j.jnoncrysol.2012.01.058
Plain TextBiron, Rémi, Pahud, Céline, Haug, Franz-Josef, Ballif, Christophe (2012) Origin of the Voc enhancement with a p-doped nc-SiOx:H window layer in n-i-p solar cells. Journal of Non-Crystalline Solids, 358 (17) 1958-1961 doi:10.1016/j.jnoncrysol.2012.01.058
In(2012, September) Journal of Non-Crystalline Solids Vol. 358 (17) Elsevier BV

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Biron, Rémi, Pahud, Celine, Haug, Franz-Josef, Escarré, Jordi, Söderström, Karin, Ballif, Christophe (2011) Window layer with p doped silicon oxide for high Voc thin-film silicon n-i-p solar cells. Journal of Applied Physics, 110 (12). 124511pp. doi:10.1063/1.3669389
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