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Freysoldt, Christoph, Pfanner, Gernot, Neugebauer, Jörg (2012) The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries. Journal of Non-Crystalline Solids, 358 (17) 2063-2066 doi:10.1016/j.jnoncrysol.2011.12.090

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Reference TypeJournal (article/letter/editorial)
TitleThe dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries
JournalJournal of Non-Crystalline Solids
AuthorsFreysoldt, ChristophAuthor
Pfanner, GernotAuthor
Neugebauer, JörgAuthor
Year2012 (September)Volume358
Issue17
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2011.12.090Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID648747Long-form Identifiermindat:1:5:648747:2
GUID0
Full ReferenceFreysoldt, Christoph, Pfanner, Gernot, Neugebauer, Jörg (2012) The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries. Journal of Non-Crystalline Solids, 358 (17) 2063-2066 doi:10.1016/j.jnoncrysol.2011.12.090
Plain TextFreysoldt, Christoph, Pfanner, Gernot, Neugebauer, Jörg (2012) The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries. Journal of Non-Crystalline Solids, 358 (17) 2063-2066 doi:10.1016/j.jnoncrysol.2011.12.090
In(2012, September) Journal of Non-Crystalline Solids Vol. 358 (17) Elsevier BV

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Pfanner, Gernot, Freysoldt, Christoph, Neugebauer, Jörg, Gerstmann, Uwe (2012) Ab initioEPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion. Physical Review B, 85 (19) doi:10.1103/physrevb.85.195202
Pfanner, Gernot, Freysoldt, Christoph, Neugebauer, Jörg (2011) Ab initiostudy of electron paramagnetic resonance hyperfine structure of the silicon dangling bond: Role of the local environment. Physical Review B, 83 (14) doi:10.1103/physrevb.83.144110
Fehr, M., Schnegg, A., Rech, B., Lips, K., Astakhov, O., Finger, F., Freysoldt, C., Bittl, R., Teutloff, C. (2012) Dangling bonds in amorphous silicon investigated by multifrequency EPR. Journal of Non-Crystalline Solids, 358 (17) 2067-2070 doi:10.1016/j.jnoncrysol.2011.12.105
Xiao, Lihong, Astakhov, Oleksandr, Finger, Friedhelm, Stutzmann, Martin (2012) Determination of the defect density in thin film amorphous and microcrystalline silicon from ESR measurements: The influence of the sample preparation procedure. Journal of Non-Crystalline Solids, 358 (17) 2078-2081 doi:10.1016/j.jnoncrysol.2012.01.039
Pfanner, G., Freysoldt, C., Neugebauer, J., Inam, F., Drabold, D., Jarolimek, K., Zeman, M. (2013) Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters. Physical Review B, 87 (12) doi:10.1103/physrevb.87.125308
Huang, B., Robertson, J. (2012) Defect models and electrical storage mechanism in GeSbTe phase change materials. Journal of Non-Crystalline Solids, 358 (17) 2393-2397 doi:10.1016/j.jnoncrysol.2011.11.017
Kugler, S., Kohary, K., Kádas, K., Pusztai, L. (2004) Small bond angles in amorphous silicon: are they a new type of defect?. Journal of Non-Crystalline Solids, 338. 425-429 doi:10.1016/j.jnoncrysol.2004.03.011
Kugler, Sándor (2012) Advances in understanding the defects contributing to the tail states in pure amorphous silicon. Journal of Non-Crystalline Solids, 358 (17) 2060-2062 doi:10.1016/j.jnoncrysol.2012.01.056
Holovský, J., Schmid, M., Stuckelberger, M., Despeisse, M., Ballif, C., Poruba, A., Vaněček, M. (2012) Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation. Journal of Non-Crystalline Solids, 358 (17) 2035-2038 doi:10.1016/j.jnoncrysol.2011.12.031
Beyer, W., Hilgers, W., Prunici, P., Lennartz, D. (2012) Voids in hydrogenated amorphous silicon materials. Journal of Non-Crystalline Solids, 358 (17) 2023-2026 doi:10.1016/j.jnoncrysol.2011.09.030
Congreve, Daniel, Kajjam, Shantan, Chakravarty, Nayan, Dalal, Vikram (2012) Influence of oxygen on defect densities in nanocrystalline Si. Journal of Non-Crystalline Solids, 358 (17) 2071-2073 doi:10.1016/j.jnoncrysol.2012.01.049
 
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