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Robertson, John (2012) Properties and doping limits of amorphous oxide semiconductors. Journal of Non-Crystalline Solids, 358 (17) 2437-2442 doi:10.1016/j.jnoncrysol.2011.12.012

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Reference TypeJournal (article/letter/editorial)
TitleProperties and doping limits of amorphous oxide semiconductors
JournalJournal of Non-Crystalline Solids
AuthorsRobertson, JohnAuthor
Year2012 (September)Volume358
Issue17
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2011.12.012Search in ResearchGate
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Mindat Ref. ID648692Long-form Identifiermindat:1:5:648692:5
GUID0
Full ReferenceRobertson, John (2012) Properties and doping limits of amorphous oxide semiconductors. Journal of Non-Crystalline Solids, 358 (17) 2437-2442 doi:10.1016/j.jnoncrysol.2011.12.012
Plain TextRobertson, John (2012) Properties and doping limits of amorphous oxide semiconductors. Journal of Non-Crystalline Solids, 358 (17) 2437-2442 doi:10.1016/j.jnoncrysol.2011.12.012
In(2012, September) Journal of Non-Crystalline Solids Vol. 358 (17) Elsevier BV

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